Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits

• URL: http://arxiv.org/abs/2009.10101v2
• Date: Mon, 30 Aug 2021 21:04:36 GMT
• Title: Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits
• Authors: C.R.H. McRae, A. McFadden, R. Zhao, H. Wang, J.L. Long, T. Zhao, S. Park, M. Bal, C.J. Palmstr{\o}m, D.P. Pappas
• Abstract summary: Epitaxially-grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices. We measure the power-independent loss and two-level-state (TLS) loss of epitaxial, wafer-bonded, and substrate-removed Al/GaAs/Al trilayers.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Epitaxially-grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices and may even allow scalable superconducting quantum computing with low-surface-area qubits such as the merged-element transmon. In this work, we measure the power-independent loss and two-level-state (TLS) loss of epitaxial, wafer-bonded, and substrate-removed Al/GaAs/Al trilayers by measuring lumped element superconducting microwave resonators at millikelvin temperatures and down to single photon powers. The power-independent loss of the device is $(4.8 \pm 0.1) \times 10^{-5}$ and resonator-induced intrinsic TLS loss is $(6.4 \pm 0.2) \times 10^{-5}$. Dielectric loss extraction is used to determine a lower bound of the intrinsic TLS loss of the trilayer of $7.2 \times 10^{-5}$. The unusually high power-independent loss is attributed to GaAs's intrinsic piezoelectricity.

Related papers

• Low loss lumped-element inductors made from granular aluminum [3.930185302300346]
  Lumped-element inductors are an integral component in the circuit QED toolbox. In this work, we overcome this challenge by utilizing the high kinetic inductance offered by superconducting granular aluminum (grAl) We demonstrate lumped-element inductors with a few nH of inductance that are up to $100$ times more compact than inductors built from pure aluminum (Al)
  arXiv  Detail & Related papers  (2024-11-19T16:17:14Z)
• Supercurrent Multiplexing with Solid-State Integrated Hybrid Superconducting Electronics [36.136619420474766]
  We report the TDM of supercurrent with a 1-input-8-outputs voltage-actuated hybrid superconducting demultiplexer for the first time. The superconducting demultiplexer operates up to 100 MHz at 50 mK, features an insertion loss of 0 dB in the superconducting state, and an OFF/ON ratio of 17.5 dB in a 50-Ohm-matched cryogenic measurement setup.
  arXiv  Detail & Related papers  (2024-10-15T15:54:31Z)
• Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications [0.0]
  parallel plate capacitors composed of aluminum-contacted, crystalline silicon fins are shown to be a promising technology for use in superconducting circuits. Single-crystal Si capacitors are incorporated in lumped element resonators and transmons by shunting them with lithographically patterned aluminum inductors and conventional $Al/AlO_x/Al$ Josephson junctions.
  arXiv  Detail & Related papers  (2024-08-02T16:24:22Z)
• Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
  Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature. We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
  arXiv  Detail & Related papers  (2024-05-03T23:02:30Z)
• Annealing reduces Si$_3$N$_4$ microwave-frequency dielectric loss in superconducting resonators [0.0]
  Microwave-frequency devices rely on silicon nitride (Si$_3$N$_4$) for sensing, signal processing, and quantum communication. We measure the cryogenic loss of either as-deposited or high-temperature stoichiometric Si$_3$N$_4$ as a function of drive strength and temperature.
  arXiv  Detail & Related papers  (2023-12-21T00:44:46Z)
• High-Q trenched aluminum coplanar resonators with an ultrasonic edge microcutting for superconducting quantum devices [0.0]
  Dielectric losses are one of the key factors limiting the coherence of superconducting qubits. We report on superconducting CPW microwave resonators with internal quality factors exceeding 5x106 at high powers and 2x106 at low power. Josephson junction compatible CPW resonators fabrication process with both airbridges and silicon substrate etching is proposed.
  arXiv  Detail & Related papers  (2023-06-28T15:25:37Z)
• Millikelvin measurements of permittivity and loss tangent of lithium niobate [50.591267188664666]
  Lithium niobate is an electro-optic material with many applications in microwave signal processing, communication, quantum sensing, and quantum computing. We present findings on evaluating the complex electromagnetic permittivity of lithium niobate at millikelvin temperatures.
  arXiv  Detail & Related papers  (2023-02-24T22:05:42Z)
• Precision measurement of the microwave dielectric loss of sapphire in the quantum regime with parts-per-billion sensitivity [50.591267188664666]
  Dielectric loss is known to limit state-of-the-art superconducting qubit lifetimes. Recent experiments imply upper bounds on bulk dielectric loss tangents on the order of $100$ parts-per-billion. We have devised a measurement method capable of separating and resolving bulk dielectric loss with a sensitivity at the level of $5$ parts per billion.
  arXiv  Detail & Related papers  (2022-06-29T00:14:11Z)
• Thermal self-oscillations in monolayer graphene coupled to a superconducting microwave cavity [58.720142291102135]
  We observe thermal self-oscillations in a monolayer graphene flake coupled to superconducting resonator. The experimental observations fit well with theoretical model based on thermal instability. The modelling of the oscillation sidebands provides a method to evaluate electron phonon coupling in disordered graphene sample at low energies.
  arXiv  Detail & Related papers  (2022-05-27T15:38:41Z)
• Measurement of the Low-temperature Loss Tangent of High-resistivity Silicon with a High Q-factor Superconducting Resonator [58.720142291102135]
  We present the direct loss tangent measurement of a high-resist intrinsicivity (100) silicon wafer in the temperature range from 70 mK to 1 K. The measurement was performed using a technique that takes advantage of a high quality factor superconducting niobium resonator.
  arXiv  Detail & Related papers  (2021-08-19T20:13:07Z)
• Quantum Sensors for Microscopic Tunneling Systems [58.720142291102135]
  tunneling Two-Level-Systems (TLS) are important for micro-fabricated quantum devices such as superconducting qubits. We present a method to characterize individual TLS in virtually arbitrary materials deposited as thin-films. Our approach opens avenues for quantum material spectroscopy to investigate the structure of tunneling defects.
  arXiv  Detail & Related papers  (2020-11-29T09:57:50Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.