nanoTesla magnetometry with the silicon vacancy in silicon carbide

• URL: http://arxiv.org/abs/2011.01137v2
• Date: Thu, 17 Jun 2021 13:19:14 GMT
• Title: nanoTesla magnetometry with the silicon vacancy in silicon carbide
• Authors: John B. S. Abraham (1), Cameron Gutgsell (1), Dalibor Todorovski (1), Scott Sperling (1), Jacob E. Epstein (1), Brian S. Tien-Street (1), Timothy M. Sweeney (1), Jeremiah J. Wathen (1), Elizabeth A. Pogue (2 and 3), Peter G. Brereton (4), Tyrel M. McQueen (2 and 3 and 5), Wesley Frey (6), B. D. Clader (1), Robert Osiander (1) ((1) Johns Hopkins University Applied Physics Laboratory Laurel MD (2) Department of Chemistry Johns Hopkins University Baltimore MD, (3) Institute for Quantum Matter Department of Physics and Astronomy Johns Hopkins University Baltimore MD, (4) Department of Physics United States Naval Academy Annapolis MD, (5) Department of Materials Science and Engineering Johns Hopkins University Baltimore MD, (6) McClellan Nuclear Research Center UC Davis McClellan CA)
• Abstract summary: negatively charged silicon vacancy is one of the leading spin defects studied in silicon carbide. NanoTesla shot-noise limited ensemble magnetometry based on optically detected magnetic resonance with silicon vacancy in 4H silicon carbide.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Silicon Carbide is a promising host material for spin defect based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon vacancy is one of the leading spin defects studied in silicon carbide owing to its near telecom photoemission, high spin number, and nearly temperature independent ground state zero field splitting. We report the realization of nanoTesla shot-noise limited ensemble magnetometry based on optically detected magnetic resonance with the silicon vacancy in 4H silicon carbide. By coarsely optimizing the anneal parameters and minimizing power broadening, we achieved a sensitivity of 3.5 nT/$\sqrt{Hz}$. This was accomplished without utilizing complex photonic engineering, control protocols, or applying excitation powers greater than a Watt. This work demonstrates that the silicon vacancy in silicon carbide provides a low-cost and simple approach to quantum sensing of magnetic fields.

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