Nanofabricated and integrated colour centres in silicon carbide with
high-coherence spin-optical properties
- URL: http://arxiv.org/abs/2109.04737v2
- Date: Wed, 29 Sep 2021 06:53:00 GMT
- Title: Nanofabricated and integrated colour centres in silicon carbide with
high-coherence spin-optical properties
- Authors: Charles Babin, Rainer St\"ohr, Naoya Morioka, Tobias Linkewitz, Timo
Steidl, Raphael W\"ornle, Di Liu, Erik Hesselmeier, Vadim Vorobyov, Andrej
Denisenko, Mario Hentschel, Christian Gobert, Patrick Berwian, Georgy V.
Astakhov, Wolfgang Knolle, Sridhar Majety, Pranta Saha, Marina Radulaski,
Nguyen Tien Son, Jawad Ul-Hassan, Florian Kaiser, J\"org Wrachtrup
- Abstract summary: We demonstrate nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties.
We show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides.
For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution.
- Score: 1.3246119976070139
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Optically addressable spin defects in silicon carbide (SiC) are an emerging
platform for quantum information processing. Lending themselves to modern
semiconductor nanofabrication, they promise scalable high-efficiency
spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon
vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic
spin-optical properties. In particular, we show nearly transform limited photon
emission and record spin coherence times for single defects generated via ion
implantation and in triangular cross section waveguides. For the latter, we
show further controlled operations on nearby nuclear spin qubits, which is
crucial for fault-tolerant quantum information distribution based on cavity
quantum electrodynamics.
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