Dissipation-induced symmetry breaking: Emphanitic transitions in lead- and tin-containing chalcogenides and halide perovskites

• URL: http://arxiv.org/abs/2012.05478v1
• Date: Thu, 10 Dec 2020 06:50:43 GMT
• Title: Dissipation-induced symmetry breaking: Emphanitic transitions in lead- and tin-containing chalcogenides and halide perovskites
• Authors: Kingshuk Mukhuti, Sudip Sinha, Subhasis Sinha, and Bhavtosh Bansal
• Abstract summary: emphanisis is the name given to the observed displacement of the lead or the tin ions from their cubic symmetry ground state to a locally distorted phase at high temperature. We propose a quantum tunneling-based model for emphanisis where decoherence is responsible for the local symmetry breaking with increasing temperature.
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• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Lead and tin-based chalcogenide semiconductors like PbTe or SnSe have long been known to exhibit an unusually low thermal conductivity that makes them very attractive thermoelectric materials. An apparently unrelated fact is that the excitonic bandgap in these materials increases with temperature, whereas for most semiconductors one observes the opposite trend. These two anomalous features are also seen in a very different class of photovoltaic materials, namely the halide-perovskites such as CsPbBr3. It has been previously proposed that emphanisis, a local symmetry-breaking phenomenon, is the one common origin of these unusual features. Discovered a decade ago, emphanisis is the name given to the observed displacement of the lead or the tin ions from their cubic symmetry ground state to a locally distorted phase at high temperature. This phenomenon has been puzzling because it is unusual for the high-temperature state to be of a lower symmetry than the degenerate ground state. Motivated by the celebrated vibration-inversion resonance of the ammonia molecule, we propose a quantum tunneling-based model for emphanisis where decoherence is responsible for the local symmetry breaking with increasing temperature. From the analytic expression of the temperature dependence of the tunnel splitting (which serves as an order parameter), we provide three-parameter fitting formulae which capture the observed temperature dependence of the ionic displacements as well as the anomalous increase of the excitonic bandgap in all the relevant materials.

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