A Raman heterodyne determination of the magnetic anisotropy for the
ground and optically excited states of Y$_{2}$SiO$_{5}$ doped with Sm$^{3+}$
- URL: http://arxiv.org/abs/2104.11415v1
- Date: Fri, 23 Apr 2021 05:07:00 GMT
- Title: A Raman heterodyne determination of the magnetic anisotropy for the
ground and optically excited states of Y$_{2}$SiO$_{5}$ doped with Sm$^{3+}$
- Authors: N. L. Jobbitt, J.-P. R. Wells, M. F. Reid, J. J. Longdell
- Abstract summary: We present the full magnetic g tensors of the $6$H$_5/2$Z$_1$ and $4$G$_5/2$A$_1$ electronic states for both crystallographic sites in Sm$3+$:Y$_2$SiO$_5$.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: We present the full magnetic g tensors of the $^{6}$H$_{5/2}$Z$_{1}$ and
$^{4}$G$_{5/2}$A$_{1}$ electronic states for both crystallographic sites in
Sm$^{3+}$:Y$_{2}$SiO$_{5}$, deduced through the use of Raman heterodyne
spectroscopy performed along 9 different crystallographic directions. The
maximum principle g values were determined to be 0.447 (site 1) and 0.523 (site
2) for the ground state and 2.490 (site 1) and 3.319 (site 2) for the excited
state. The determination of these g tensors provide essential spin Hamiltonian
parameters that can be utilized in future magnetic and hyperfine studies of
Sm$^{3+}$:Y$_{2}$SiO$_{5}$, with applications in quantum information storage
and communication devices.
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