Susceptibility of Trapped-Ion Qubits to Low-Dose Radiation Sources
- URL: http://arxiv.org/abs/2105.02753v2
- Date: Wed, 2 Jun 2021 23:45:39 GMT
- Title: Susceptibility of Trapped-Ion Qubits to Low-Dose Radiation Sources
- Authors: Jiafeng Cui, A.J. Rasmusson, Marissa D'Onofrio, Yuanheng Xie,
Evangeline Wolanski, and Philip Richerme
- Abstract summary: We study the real-time susceptibility of trapped-ion quantum systems to small doses of ionizing radiation.
We found no quantifiable degradation of ion trap performance in the presence of low-dose radiation sources.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: We experimentally study the real-time susceptibility of trapped-ion quantum
systems to small doses of ionizing radiation. We expose an ion-trap apparatus
to a variety of $\alpha$, $\beta$, and $\gamma$ sources and measure the
resulting changes in trapped-ion qubit lifetimes, coherence times, gate
fidelities, and motional heating rates. We found no quantifiable degradation of
ion trap performance in the presence of low-dose radiation sources for any of
the measurements performed. This finding is encouraging for the long-term
prospects of using ion-based quantum information systems in extreme
environments, indicating that much larger doses may be required to induce
errors in trapped-ion quantum processors.
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