High-contrast plasmonic-enhanced shallow spin defects in hexagonal boron nitride for quantum sensing

• URL: http://arxiv.org/abs/2106.13915v1
• Date: Sat, 26 Jun 2021 00:43:13 GMT
• Title: High-contrast plasmonic-enhanced shallow spin defects in hexagonal boron nitride for quantum sensing
• Authors: Xingyu Gao, Boyang Jiang, Andres E. Llacsahuanga Allcca, Kunhong Shen, Mohammad A. Sadi, Abhishek B. Solanki, Peng Ju, Zhujing Xu, Pramey Upadhyaya, Yong P. Chen, Sunil A. Bhave, Tongcang Li
• Abstract summary: We report a record-high ODMR contrast of 46$%$ at room temperature. simultaneous enhancement of the photoluminescence of hBN spin defects by up to 17-fold by the surface plasmon of a gold-film microwave waveguide. Our results support the promising potential of hBN spin defects for nanoscale quantum sensing.
• Score: 2.0664592603816856
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46$\%$ at room temperature, and simultaneous enhancement of the photoluminescence of hBN spin defects by up to 17-fold by the surface plasmon of a gold-film microwave waveguide. Our results are obtained with shallow boron vacancy spin defects in hBN nanosheets created by low-energy He$^+$ ion implantation, and a gold-film microwave waveguide fabricated by photolithography. We also explore the effects of microwave and laser powers on the ODMR, and improve the sensitivity of hBN spin defects for magnetic field detection. Our results support the promising potential of hBN spin defects for nanoscale quantum sensing.

Related papers

• Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
  Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature. We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
  arXiv  Detail & Related papers  (2024-05-03T23:02:30Z)
• Optically-active spin defects in few-layer thick hexagonal boron nitride [0.0]
  Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units. We first demonstrate that the electron spin resonance frequencies of boron vacancy centres (V$_textB-$) can be detected optically in the limit of few-atomic-layer thick hBN flakes. We then analyze the variations of the electronic spin properties of V$_textB-$ centres with the hBN thickness.
  arXiv  Detail & Related papers  (2023-04-24T13:06:16Z)
• Quantum sensing and imaging with spin defects in hexagonal boron nitride [2.8409310270487538]
  Color centers in hexagonal boron nitride (hBN) have emerged as promising candidates for a new wave of quantum applications. The recently discovered optically addressable spin defects in hBN provide a quantum interface between photons and electron spins for quantum sensing applications. This review summarizes the rapidly evolving field of nanoscale and microscale quantum sensing with spin defects in hBN.
  arXiv  Detail & Related papers  (2023-02-22T06:21:28Z)
• Van der Waals Materials for Applications in Nanophotonics [49.66467977110429]
  We present an emerging class of layered van der Waals (vdW) crystals as a viable nanophotonics platform. We extract the dielectric response of 11 mechanically exfoliated thin-film (20-200 nm) van der Waals crystals, revealing high refractive indices up to n = 5. We fabricate nanoantennas on SiO$$ and gold utilizing the compatibility of vdW thin films with a variety of substrates.
  arXiv  Detail & Related papers  (2022-08-12T12:57:14Z)
• Single quantum emitters with spin ground states based on Cl bound excitons in ZnSe [55.41644538483948]
  We show a new type of single photon emitter with potential electron spin qubit based on Cl impurities inSe. Results suggest single Cl impurities are suitable as single photon source with potential photonic interface.
  arXiv  Detail & Related papers  (2022-03-11T04:29:21Z)
• Excited-state spectroscopy of spin defects in hexagonal boron nitride [20.739656944743345]
  We probed electron-spin resonance transitions in the excited state of negatively-charged boron vacancy defects in hexagonal boron nitride (hBN) at room temperature. The data showed that the excited state has a zero-field splitting of 2.1 GHz, a g factor similar to the ground state and two types of hyperfine splitting 90 MHz and 18.8 MHz respectively. Negative peaks in photoluminescence and ODMR contrast as a function of magnetic field magnitude and angle at level anti-crossing were observed and explained by coherent spin precession and anisotropic relaxation.
  arXiv  Detail & Related papers  (2021-12-06T10:28:57Z)
• Phonon dephasing and spectral diffusion of quantum emitters in hexagonal Boron Nitride [52.915502553459724]
  Quantum emitters in hexagonal boron nitride (hBN) are emerging as bright and robust sources of single photons for applications in quantum optics. We study phonon dephasing and spectral diffusion of quantum emitters in hBN via resonant excitation spectroscopy at cryogenic temperatures.
  arXiv  Detail & Related papers  (2021-05-25T05:56:18Z)
• Femtosecond Laser Writing of Spin Defects in Hexagonal Boron Nitride [2.28145433491942]
  We demonstrate that optically-addressable spin ensembles in hexagonal boron nitride (hBN) can be generated by femtosecond laser irradiation. We show that the creation of spin defects in hBN is strongly affected by the pulse energy of the femtosecond laser. Our work provides a convenient way to create spin defects in hBN by femtosecond laser writing, which shows promising prospects for quantum technologies.
  arXiv  Detail & Related papers  (2020-12-06T07:57:40Z)
• Optical repumping of resonantly excited quantum emitters in hexagonal boron nitride [52.77024349608834]
  We present an optical co-excitation scheme which uses a weak non-resonant laser to reduce transitions to a dark state and amplify the photoluminescence from quantum emitters in hexagonal boron nitride (hBN) Our results are important for the deployment of atom-like defects in hBN as reliable building blocks for quantum photonic applications.
  arXiv  Detail & Related papers  (2020-09-11T10:15:22Z)
• Mechanical Decoupling of Quantum Emitters in Hexagonal Boron Nitride from Low-Energy Phonon Modes [52.77024349608834]
  Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature. This unusual observation was traced back to decoupling from in-plane phonon modes which can arise if the emitter is located between two planes of the hBN host material.
  arXiv  Detail & Related papers  (2020-04-22T20:00:49Z)
• Engineering spin defects in hexagonal boron nitride [0.0]
  Two-dimensional hexagonal boron nitride offers intriguing opportunities for advanced studies of light-matter interaction at the nanoscale. We demonstrate the engineering of optically-addressable spin defects based on the negatively-charged boron vacancy center. Results are important for advanced quantum and nanophotonics realizations involving manipulation and readout of spin defects in hexagonal boron nitride.
  arXiv  Detail & Related papers  (2020-04-16T21:14:04Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.