A quantum bound on the 1/f noise in semiconductors with a conical energy-momentum dispersion

• URL: http://arxiv.org/abs/2107.01652v1
• Date: Sun, 4 Jul 2021 14:38:54 GMT
• Title: A quantum bound on the 1/f noise in semiconductors with a conical energy-momentum dispersion
• Authors: Kirill A. Kazakov
• Abstract summary: The quantum indeterminacy caused by non-commutativity of observables at different times sets a lower bound on the voltage noise power spectrum in any conducting material. semiconductors with a conical energy-momentum dispersion of charge carriers. Its momentum decomposition is found to be singular at zero particle momentum, a measurable consequence being a sharp peak in the noise magnitude at small charge carrier density.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: The quantum indeterminacy caused by non-commutativity of observables at different times sets a lower bound on the voltage noise power spectrum in any conducting material. This bound is calculated explicitly in the case of semiconductors with a conical energy-momentum dispersion of charge carriers. It possesses all characteristic properties of 1/f noise. Its momentum decomposition is found to be singular at zero particle momentum, a measurable consequence being a sharp peak in the noise magnitude at small charge carrier density. In application to monolayer graphene, this peak becomes M-shaped on account of a continuous transition from the electron to hole conductivity. A comparison with experimental data is made which demonstrates that the calculated power spectrum is close in magnitude and congruent to the observed.

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