The fundamental 1/f noise in monolayer graphene
- URL: http://arxiv.org/abs/2111.01586v1
- Date: Tue, 2 Nov 2021 13:31:59 GMT
- Title: The fundamental 1/f noise in monolayer graphene
- Authors: Kirill A. Kazakov
- Abstract summary: The quantum indeterminacy caused by non-commutativity of observables at different times sets a lower bound on the voltage noise power spectrum in any conducting material.
It is found that account of graphene pseudospin/valley band structure raises the quantum bound by a factor of 7/2.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: The quantum indeterminacy caused by non-commutativity of observables at
different times sets a lower bound on the voltage noise power spectrum in any
conducting material. This bound is calculated explicitly in the case of
monolayer graphene. It is found that account of graphene pseudospin/valley band
structure raises the quantum bound by a factor of 7/2 compared to the case of
spinless charge carriers with a conical energy-momentum dispersion. The bound
possesses all characteristic properties of 1/f noise, and its dependence on the
charge carrier density is congruent to the experimentally observed.
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