Detecting induced $p \pm ip$ pairing at the Al-InAs interface with a quantum microwave circuit

• URL: http://arxiv.org/abs/2107.03695v3
• Date: Wed, 11 May 2022 14:00:02 GMT
• Title: Detecting induced $p \pm ip$ pairing at the Al-InAs interface with a quantum microwave circuit
• Authors: D. Phan and J. Senior and A. Ghazaryan and M. Hatefipour and W. M. Strickland and J. Shabani and M. Serbyn and A. P. Higginbotham
• Abstract summary: Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a strong fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband $p \pm i p$ pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.

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