Probing defect densities at the edges and inside Josephson junctions of
superconducting qubits
- URL: http://arxiv.org/abs/2108.06555v2
- Date: Mon, 7 Mar 2022 14:00:22 GMT
- Title: Probing defect densities at the edges and inside Josephson junctions of
superconducting qubits
- Authors: Alexander Bilmes, Serhii Volosheniuk, Alexey V. Ustinov, and J\"urgen
Lisenfeld
- Abstract summary: Tunneling defects in disordered materials form spurious two-level systems.
For superconducting qubits, defects in tunnel barriers of submicrometer-sized Josephson junctions couple strongest to the qubit.
We investigate whether defects appear predominantly at the edges or deep within the amorphous tunnel barrier of a junction.
- Score: 58.720142291102135
- License: http://creativecommons.org/licenses/by-sa/4.0/
- Abstract: Tunneling defects in disordered materials form spurious two-level systems
which are a major source of decoherence for micro-fabricated quantum devices.
For superconducting qubits, defects in tunnel barriers of submicrometer-sized
Josephson junctions couple strongest to the qubit, which necessitates
optimization of the junction fabrication to mitigate defect formation. Here, we
investigate whether defects appear predominantly at the edges or deep within
the amorphous tunnel barrier of a junction. For this, we compare defect
densities in differently shaped Al/AlO$_x$/Al Josephson junctions that are part
of a Transmon qubit. We observe that the number of detectable junction-defects
is proportional to the junction area, and does not significantly scale with the
junction's circumference, which proposes that defects are evenly distributed
inside the tunnel barrier. Moreover, we find very similar defect densities in
thermally grown tunnel barriers that were formed either directly after the base
electrode was deposited, or in a separate deposition step after removal of
native oxide by Argon ion milling.
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