Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor

• URL: http://arxiv.org/abs/2201.11472v1
• Date: Thu, 27 Jan 2022 12:22:02 GMT
• Title: Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor
• Authors: Jiliang Yang, Jian Wang, Wenda Fan, Yangbo Zhang, Changkui Duan, Guangchong Hu, Gabriele G.de Boo, Brett C. Johnson, Jeffrey C. McCallum, Sven Rogge, Chunming Yin, Jiangfeng Du
• Abstract summary: homogeneous linewidths observed for single rare-earth ions are orders of magnitude larger than the sub-kilohertz linewidths observed for ensembles in bulk crystals. We report a spectral broadening study on a single Er$3+$ ion in a Si nano-transistor.
• Score: 7.046502385485391
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Single rare-earth ions in solids show great potential for quantum applications, including single photon emission, quantum computing, and high-precision sensing. However, homogeneous linewidths observed for single rare-earth ions are orders of magnitude larger than the sub-kilohertz linewidths observed for ensembles in bulk crystals. The spectral broadening creates a significant challenge for achieving entanglement generation and qubit operation with single rare-earth ions, so it is critical to investigate the broadening mechanisms. We report a spectral broadening study on a single Er$^{3+}$ ion in a Si nano-transistor. The Er-induced photoionisation rate is found to be an appropriate quantity to represent the optical transition probability for spectroscopic studies, and the single ion spectra display a Lorentzian lineshape at all optical powers in use. Spectral broadening is observed at relatively high optical powers and is caused by spectral diffusion on a fast time scale.

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