Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor
- URL: http://arxiv.org/abs/2201.11472v1
- Date: Thu, 27 Jan 2022 12:22:02 GMT
- Title: Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor
- Authors: Jiliang Yang, Jian Wang, Wenda Fan, Yangbo Zhang, Changkui Duan,
Guangchong Hu, Gabriele G.de Boo, Brett C. Johnson, Jeffrey C. McCallum, Sven
Rogge, Chunming Yin, Jiangfeng Du
- Abstract summary: homogeneous linewidths observed for single rare-earth ions are orders of magnitude larger than the sub-kilohertz linewidths observed for ensembles in bulk crystals.
We report a spectral broadening study on a single Er$3+$ ion in a Si nano-transistor.
- Score: 7.046502385485391
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Single rare-earth ions in solids show great potential for quantum
applications, including single photon emission, quantum computing, and
high-precision sensing. However, homogeneous linewidths observed for single
rare-earth ions are orders of magnitude larger than the sub-kilohertz
linewidths observed for ensembles in bulk crystals. The spectral broadening
creates a significant challenge for achieving entanglement generation and qubit
operation with single rare-earth ions, so it is critical to investigate the
broadening mechanisms. We report a spectral broadening study on a single
Er$^{3+}$ ion in a Si nano-transistor. The Er-induced photoionisation rate is
found to be an appropriate quantity to represent the optical transition
probability for spectroscopic studies, and the single ion spectra display a
Lorentzian lineshape at all optical powers in use. Spectral broadening is
observed at relatively high optical powers and is caused by spectral diffusion
on a fast time scale.
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