Fast high-fidelity single-shot readout of spins in silicon using a single-electron box

• URL: http://arxiv.org/abs/2203.06608v1
• Date: Sun, 13 Mar 2022 09:38:31 GMT
• Title: Fast high-fidelity single-shot readout of spins in silicon using a single-electron box
• Authors: G. A. Oakes, V.N. Ciriano-Tejel, D. Wise, M. A. Fogarty, T. Lundberg, C. Lain\'e, S. Schaal, F. Martins, D. J. Ibberson, L. Hutin, B. Bertrand, N. Stelmashenko, J. A. W. Robinson, L. Ibberson, A. Hashim, I. Siddiqi, A. Lee, M. Vinet, C. G. Smith, J.J.L. Morton, and M. F. Gonzalez-Zalba
• Abstract summary: We present two demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor. The sensor, despite requiring fewer electrodes than conventional detectors, performs at the state-of-the-art achieving spin read-out fidelity of 99.2% in less than 6 $mu$s.
• Score: 0.5455889233228607
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we present two complementary demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor: a radio-frequency single-electron box. The sensor, despite requiring fewer electrodes than conventional detectors, performs at the state-of-the-art achieving spin read-out fidelity of 99.2% in less than 6 $\mu$s. We demonstrate that low-loss high-impedance resonators, highly coupled to the sensing dot, in conjunction with Josephson parametric amplification are instrumental in achieving optimal performance. We quantify the benefit of Pauli spin blockade over spin-dependent tunneling to a reservoir, as the spin-to-charge conversion mechanism in these readout schemes. Our results place dispersive charge sensing at the forefront of readout methodologies for scalable semiconductor spin-based quantum processors.

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