Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
- URL: http://arxiv.org/abs/2204.07401v1
- Date: Fri, 15 Apr 2022 09:37:36 GMT
- Title: Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
- Authors: Fang-Ming Jing, Zhuo-Zhi Zhang, Guo-Quan Qin, Gang Luo, Gang Cao,
Hai-Ou Li, Xiang-Xiang Song, Guo-Ping Guo
- Abstract summary: Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics.
Gate-controlled quantum dot architectures have been applied in 2D materials and their heterostructures.
- Score: 1.253293283032098
- License: http://creativecommons.org/licenses/by-nc-nd/4.0/
- Abstract: Two-dimensional (2D) materials are a family of layered materials exhibiting
rich exotic phenomena, such as valley-contrasting physics. Down to
single-particle level, unraveling fundamental physics and potential
applications including quantum information processing in these materials
attracts significant research interests. To unlock these great potentials,
gate-controlled quantum dot architectures have been applied in 2D materials and
their heterostructures. Such systems provide the possibility of electrical
confinement, control, and manipulation of single carriers in these materials.
In this review, efforts in gate-controlled quantum dots in 2D materials are
presented. Following basic introductions to valley degree of freedom and
gate-controlled quantum dot systems, the up-to-date progress in etched and
gate-defined quantum dots in 2D materials, especially in graphene and
transition metal dichalcogenides, is provided. The challenges and opportunities
for future developments in this field, from views of device design, fabrication
scheme, and control technology, are discussed. The rapid progress in this field
not only sheds light on the understanding of spin-valley physics, but also
provides an ideal platform for investigating diverse condensed matter physics
phenomena and realizing quantum computation in the 2D limit.
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