Nuclear Spin Quantum Memory in Silicon Carbide

• URL: http://arxiv.org/abs/2204.09295v2
• Date: Mon, 8 Aug 2022 17:36:30 GMT
• Title: Nuclear Spin Quantum Memory in Silicon Carbide
• Authors: Benedikt Tissot, Michael Trupke, Philipp Koller, Thomas Astner, Guido Burkard
• Abstract summary: Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. We develop a protocol to polarize the nuclear spin, based on a rigorous theoretical model of the defect.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g. vanadium, emit in one of the telecom bands, but the large ground state hyperfine manifold poses a problem for applications which require pure quantum states. We develop a driven, dissipative protocol to polarize the nuclear spin, based on a rigorous theoretical model of the defect. We further show that nuclear-spin polarization enables the use of well-known methods for initialization and long-time coherent storage of quantum states. The proposed nuclear-spin preparation protocol thus marks the first step towards an all-optically controlled integrated platform for quantum technology with TM defects in SiC.

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