Utilizing photonic band gap in triangular silicon carbide structures for
efficient quantum nanophotonic hardware
- URL: http://arxiv.org/abs/2208.02996v4
- Date: Wed, 4 Jan 2023 08:49:07 GMT
- Title: Utilizing photonic band gap in triangular silicon carbide structures for
efficient quantum nanophotonic hardware
- Authors: Pranta Saha, Sridhar Majety, Marina Radulaski
- Abstract summary: We study formation of photonic band gap in structures with a triangular cross-section.
We propose applications in three areas: the TE-pass filter, the TM-pass filter, and the highly reflective photonic crystal mirror.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: Silicon carbide is among the leading quantum information material platforms
due to the long spin coherence and single-photon emitting properties of its
color center defects. Applications of silicon carbide in quantum networking,
computing, and sensing rely on the efficient collection of color center
emission into a single optical mode. Recent hardware development in this
platform has focused on angle-etching processes that preserve emitter
properties and produce triangularly shaped devices. However, little is known
about the light propagation in this geometry. We explore the formation of
photonic band gap in structures with a triangular cross-section, which can be
used as a guiding principle in developing efficient quantum nanophotonic
hardware in silicon carbide. Furthermore, we propose applications in three
areas: the TE-pass filter, the TM-pass filter, and the highly reflective
photonic crystal mirror, which can be utilized for efficient collection and
propagating mode selection of light emission.
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