Effect of strain on tunneling time in graphene magnetic barrier
- URL: http://arxiv.org/abs/2208.14386v1
- Date: Tue, 30 Aug 2022 16:52:10 GMT
- Title: Effect of strain on tunneling time in graphene magnetic barrier
- Authors: Youssef Fattasse, Miloud Mekkaoui, Ahmed Jellal, Abdelhadi Bahaoui
- Abstract summary: We show that the gate voltage and strain have the ability to change the group delay from subluminality to superluminality.
This may have significant uses in high-speed graphene-based nanoelectronics.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: We solve the Dirac equation in three regions of graphene to get the solutions
of the energy spectrum in connection to the strain, energy gap, and magnetic
field. The Goos-H\"anchen shifts and group delay time will be obtained by
applying the stationary phase approximation after the wave functions at the
interfaces have been matched. Our results suggest that the group delay time is
influenced by the presence of strain along the armchair and zigzag directions.
We show that the gate voltage and strain have the ability to change the group
delay from subluminality to superluminality. This may have significant uses in
high-speed graphene-based nanoelectronics.
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