Optical properties of SiV and GeV color centers in nanodiamonds under
hydrostatic pressures up to 180 GPa
- URL: http://arxiv.org/abs/2209.09792v3
- Date: Tue, 29 Nov 2022 20:58:31 GMT
- Title: Optical properties of SiV and GeV color centers in nanodiamonds under
hydrostatic pressures up to 180 GPa
- Authors: Baptiste Vindolet, Marie-Pierre Adam, Lo\"ic Toraille, Mayeul Chipaux,
Antoine Hilberer, G\'eraud Dupuy, Lukas Razinkovas, Audrius Alkauskas,
Gerg\H{o} Thiering, Adam Gali, Mary De Feudis, Midrel Wilfried Ngandeu
Ngambou, Jocelyn Achard, Alexandre Tallaire, Martin Schmidt, Christoph
Becher, Jean-Fran\c{c}ois Roch
- Abstract summary: Under hydrostatic pressure we observe blue-shifts of the SiV and GeV zero-phonon lines by 17 THz (70 meV) and 78 THz (320 meV)
This work provides guidance on the use of group-IV-vacancy centers as quantum sensors under extreme pressures.
- Score: 39.5906786952554
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: We investigate the optical properties of silicon-vacancy (SiV) and
germanium-vacancy (GeV) color centers in nanodiamonds under hydrostatic
pressure up to 180 GPa. The nanodiamonds were synthetized by Si or Ge-doped
plasma assisted chemical vapor deposition and, for our experiment, pressurized
in a diamond anvil cell. Under hydrostatic pressure we observe blue-shifts of
the SiV and GeV zero-phonon lines by 17 THz (70 meV) and 78 THz (320 meV),
respectively. These measured pressure induced shifts are in good agreement with
ab initio calculations that take into account the lattice compression based on
the equation of state of diamond and that are extended to the case of the
tin-vacancy (SnV) center. This work provides guidance on the use of
group-IV-vacancy centers as quantum sensors under extreme pressures that will
exploit their specific optical and spin properties induced by their intrinsic
inversion-symmetric structure.
Related papers
- Creation of Negatively Charged GeV and SnV centers in Nanodiamonds via Ion Implantation [39.93659648269682]
Solid state quantum emitters, in particular group-IV vacancy centers in diamond, are at the forefront of research in quantum technologies.
We present the fabrication of germanium- and tin- vacancy centers by means of ion implantation.
We achieve high purity single photon emission via resonant excitation and strong coherent drive of a SnV$-$ center.
arXiv Detail & Related papers (2025-03-25T09:25:51Z) - Magneto-optical properties of Group-IV--vacancy centers in diamond upon hydrostatic pressure [0.0]
negatively charged group-IV--vacancy defects in diamond, labeled as G4V($-$) or G4V centers, have received a great attention in quantum information processing.
In this study, we investigate the magneto-optical properties of the G4V centers under high hydrostatic pressures up to 180GPa.
arXiv Detail & Related papers (2024-08-19T20:46:00Z) - Single photon emitters in monolayer semiconductors coupled to transition metal dichalcogenide nanoantennas on silica and gold substrates [49.87501877273686]
Transition metal dichalcogenide (TMD) single photon emitters offer numerous advantages to quantum information applications.
Traditional materials used for the fabrication of nanoresonators, such as silicon or gallium phosphide (GaP), often require a high refractive index substrate.
Here, we use nanoantennas (NAs) fabricated from multilayer TMDs, which allow complete flexibility with the choice of substrate.
arXiv Detail & Related papers (2024-08-02T07:44:29Z) - Creation of color centers in diamond by recoil implantation through
dielectric films [0.38836072943850625]
The need of near-surface color centers in diamond for quantum technologies motivates the controlled doping of specific extrinsic impurities into the crystal lattice.
Recent experiments have shown that this can be achieved by momentum transfer from a surface precursor via ion implantation.
We extend this technique to incorporate precursors for creating nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond.
arXiv Detail & Related papers (2023-10-19T05:43:59Z) - Hyperfine Spectroscopy of Isotopically Engineered Group-IV Color Centers
in Diamond [41.911906147129656]
A quantum register coupled to a spin-photon interface is a key component in quantum communication and information processing.
Group-IV color centers in diamond (SiV, GeV, and SnV) are promising candidates for this application.
We make first-principles predictions of the hyperfine parameters of the group-IV color centers.
arXiv Detail & Related papers (2023-05-31T20:19:01Z) - Van der Waals Materials for Applications in Nanophotonics [49.66467977110429]
We present an emerging class of layered van der Waals (vdW) crystals as a viable nanophotonics platform.
We extract the dielectric response of 11 mechanically exfoliated thin-film (20-200 nm) van der Waals crystals, revealing high refractive indices up to n = 5.
We fabricate nanoantennas on SiO$$ and gold utilizing the compatibility of vdW thin films with a variety of substrates.
arXiv Detail & Related papers (2022-08-12T12:57:14Z) - Thermometry of an optically levitated nanodiamond [0.0]
We characterize the absorption of single nanodiamonds using the spin properties of nitrogen-vacancy centers in levitated diamond.
Our work opens the way to diamond materials optimization for levitation quantum experiments.
arXiv Detail & Related papers (2022-05-24T07:43:11Z) - Integration of silicon-vacancy centers in nanodiamonds with an optical
nanofiber [6.011513748797896]
We experimentally demonstrate the integration of silicon-vacancy centers in nanodiamonds (SiV-NDs) with an optical nanofiber (ONF)
We grow SiV-NDs on seed NDs on a quartz substrate using a microwave plasma-assisted chemical vapor deposition method.
We search and characterize SiV-NDs on a quartz substrate using an inverted confocal microscope and an atomic force microscope (AFM)
arXiv Detail & Related papers (2022-05-03T07:54:38Z) - Tunable and Transferable Diamond Membranes for Integrated Quantum
Technologies [48.634695885442504]
nanoscale-thick uniform diamond membranes are synthesized via "smart-cut" and isotopically (12C) purified overgrowth.
Within 110 nm thick membranes, individual germanium-vacancy (GeV-) centers exhibit stable photoluminescence at 5.4 K and average optical transition linewidths as low as 125 MHz.
This platform enables the straightforward integration of diamond membranes that host coherent color centers into quantum technologies.
arXiv Detail & Related papers (2021-09-23T17:18:39Z) - Prolonged orbital relaxation by locally modified phonon density of
states for SiV$^-$ center in nanodiamonds [45.82374977939355]
Coherent quantum systems are a key resource for emerging quantum technology.
A novel method is presented to prolong the orbital relaxation with a locally modified phonon density of states.
arXiv Detail & Related papers (2021-07-30T14:14:26Z) - Nonequilibrium Casimir effects of nonreciprocal surface waves [52.12351460454646]
We show that an isotropic dipolar particle in the vicinity of a substrate made of nonreciprocal plasmonic materials can experience a lateral Casimir force and torque.
We connect the existence of the lateral force to the asymmetric dispersion of nonreciprocal surface polaritons and the existence of the lateral torque to the spin-momentum locking of such surface waves.
arXiv Detail & Related papers (2021-06-19T23:10:04Z) - Charge State Dynamics and Optically Detected Electron Spin Resonance
Contrast of Shallow Nitrogen-Vacancy Centers in Diamond [2.2720742607784183]
Nitrogen-vacancy centers in diamond can be used for nanoscale sensing with atomic resolution and sensitivity.
In addition to degraded spin coherence, NV centers within nanometers of the surface can also exhibit decreased fluorescence contrast for optically detected electron spin resonance.
arXiv Detail & Related papers (2020-05-03T17:04:48Z)
This list is automatically generated from the titles and abstracts of the papers in this site.
This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.