Related papers: Creation of Negatively Charged GeV and SnV centers in Nanodiamonds via Ion Implantation

Creation of Negatively Charged GeV and SnV centers in Nanodiamonds via Ion Implantation

URL: http://arxiv.org/abs/2503.19490v2
Date: Wed, 09 Apr 2025 09:05:34 GMT
Title: Creation of Negatively Charged GeV and SnV centers in Nanodiamonds via Ion Implantation
Authors: Selene Sachero, Richard Waltrich, Emilio Corte, Sviatoslav Ditalia Tchernij, Alexander Kubanek,
Abstract summary: Solid state quantum emitters, in particular group-IV vacancy centers in diamond, are at the forefront of research in quantum technologies.<n>We present the fabrication of germanium- and tin- vacancy centers by means of ion implantation.<n>We achieve high purity single photon emission via resonant excitation and strong coherent drive of a SnV$-$ center.
Score: 39.93659648269682
License: http://creativecommons.org/licenses/by/4.0/
Abstract: Solid state quantum emitters, in particular group-IV vacancy centers in diamond, are at the forefront of research in quantum technologies due to their unique optical and spin properties. Reduction of the diamond host size to the nanoscale enables new opportunities in terms of integration and scalability. However, creating optically coherent quantum emitters in nanodiamonds remains a major challenge. Here, we present the fabrication of germanium- and tin- vacancy centers by means of ion implantation. We describe the fabrication process and present the optical properties of the created color centers. We achieve high purity single photon emission via resonant excitation and strong coherent drive of a SnV$^-$ center. The successful integration of heavier group-IV vacancy centers in nanodiamonds paves the way for further advances in fields like hybrid quantum photonics or sensing on the nanoscale.

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