Influence of imperfections on tunneling rate in $\delta$-layer junctions
- URL: http://arxiv.org/abs/2209.11343v3
- Date: Fri, 6 Oct 2023 03:16:22 GMT
- Title: Influence of imperfections on tunneling rate in $\delta$-layer junctions
- Authors: Juan P. Mendez and Shashank Misra and Denis Mamaluy
- Abstract summary: We investigate the influence of imperfections in phosphorous $delta$-layer tunnel junctions in silicon.
A single charged impurity in the tunnel gap can alter the tunneling rate by more than an order of magnitude.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: The atomically precise placement of dopants in semiconductors using scanning
tunneling microscopes has been used to create planar dopant-based devices,
enabling the exploration of novel classical or quantum computing concepts,
which often require precise control over tunneling rates in their operation.
While the geometry of the dopants can be defined to sub-nanometer precision,
imperfections can still play a significant role in determining the tunneling
rates. Here, we investigate the influence of different imperfections in
phosphorous $\delta$-layer tunnel junctions in silicon: variations of
$\delta$-layer thickness and tunnel gap width, interface roughness, and charged
impurities. It is found that while most of the imperfections moderately affect
the tunneling rate, a single charged impurity in the tunnel gap can alter the
tunneling rate by more than an order of magnitude, even for relatively large
tunnel gaps. Moreover, it is also revealed that the tunneling rate strongly
depends on the electrical charge sign of the impurity.
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