Memory and transduction prospects for silicon T centre devices
- URL: http://arxiv.org/abs/2209.11731v1
- Date: Fri, 23 Sep 2022 17:24:29 GMT
- Title: Memory and transduction prospects for silicon T centre devices
- Authors: Daniel B Higginbottom, Faezeh Kimiaee Asadi, Camille Chartrand,
Jia-Wei Ji, Laurent Bergeron, Michael L. W. Thewalt, Christoph Simon,
Stephanie Simmons
- Abstract summary: The T centre is a silicon-native spin-photon interface with telecommunications-band optical transitions and long-lived microwave qubits.
We characterize T centre spin ensembles to inform device design.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: The T centre, a silicon-native spin-photon interface with
telecommunications-band optical transitions and long-lived microwave qubits,
offers an appealing new platform for both optical quantum memory and microwave
to optical telecommunications band transduction. A wide range of quantum memory
and transduction schemes could be implemented on such a platform, with
advantages and disadvantages that depend sensitively on the ensemble
properties. In this work we characterize T centre spin ensembles to inform
device design. We perform the first T ensemble optical depth measurement and
calculate the improvement in centre density or resonant optical enhancement
required for efficient optical quantum memory. We further demonstrate a
coherent microwave interface by coherent population trapping (CPT) and
Autler-Townes splitting (ATS). We then determine the most promising microwave
and optical quantum memory protocol for such ensembles. By estimating the
memory efficiency both in free-space and in the presence of a cavity, we show
that efficient optical memory is possible with forecast densities. Finally, we
formulate a transduction proposal and discuss the achievable efficiency and
fidelity.
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