A 65nm 8b-Activation 8b-Weight SRAM-Based Charge-Domain Computing-in-Memory Macro Using A Fully-Parallel Analog Adder Network and A Single-ADC Interface

• URL: http://arxiv.org/abs/2212.04320v2
• Date: Tue, 2 Apr 2024 07:58:41 GMT
• Title: A 65nm 8b-Activation 8b-Weight SRAM-Based Charge-Domain Computing-in-Memory Macro Using A Fully-Parallel Analog Adder Network and A Single-ADC Interface
• Authors: Guodong Yin, Mufeng Zhou, Yiming Chen, Wenjun Tang, Zekun Yang, Mingyen Lee, Xirui Du, Jinshan Yue, Jiaxin Liu, Huazhong Yang, Yongpan Liu, Xueqing Li,
• Abstract summary: Computing-in-memory (CiM) is a promising mitigation approach by enabling multiply-accumulate operations within the memory. This work achieves 51.2GOPS throughput and 10.3TOPS/W energy efficiency, while showing 88.6% accuracy in the CIFAR-10 dataset.
• Score: 16.228299091691873
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Performing data-intensive tasks in the von Neumann architecture is challenging to achieve both high performance and power efficiency due to the memory wall bottleneck. Computing-in-memory (CiM) is a promising mitigation approach by enabling parallel in-situ multiply-accumulate (MAC) operations within the memory with support from the peripheral interface and datapath. SRAM-based charge-domain CiM (CD-CiM) has shown its potential of enhanced power efficiency and computing accuracy. However, existing SRAM-based CD-CiM faces scaling challenges to meet the throughput requirement of high-performance multi-bit-quantization applications. This paper presents an SRAM-based high-throughput ReLU-optimized CD-CiM macro. It is capable of completing MAC and ReLU of two signed 8b vectors in one CiM cycle with only one A/D conversion. Along with non-linearity compensation for the analog computing and A/D conversion interfaces, this work achieves 51.2GOPS throughput and 10.3TOPS/W energy efficiency, while showing 88.6% accuracy in the CIFAR-10 dataset.

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