Gatemon qubit based on a thin InAs-Al hybrid nanowire

• URL: http://arxiv.org/abs/2302.04053v1
• Date: Wed, 8 Feb 2023 13:46:32 GMT
• Title: Gatemon qubit based on a thin InAs-Al hybrid nanowire
• Abstract summary: We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity.
• Score: 10.034881884451806
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, we extract the energy relaxation time $T_1\sim$0.56 $\mu$s and the dephasing time $T_2^* \sim$0.38 $\mu$s. Since thin InAs-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks, our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics.

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