Purcell enhancement of a single silicon carbide color center with coherent spin control

• URL: http://arxiv.org/abs/2003.00042v1
• Date: Fri, 28 Feb 2020 19:54:24 GMT
• Title: Purcell enhancement of a single silicon carbide color center with coherent spin control
• Authors: A.L. Crook, C.P. Anderson, K.C. Miao, A. Bourassa, H. Lee, S.L. Bayliss, D.O. Bracher, X. Zhang, H. Abe, T. Ohshima, E.L. Hu, and D.D. Awschalom
• Abstract summary: We present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We demonstrate coherent control of the divacancy ground state spin inside the cavity nanostructure. This spin-cavity system represents an advance towards scalable long-distance entanglement protocols.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5,000. Subsequent coupling to a single divacancy leads to a Purcell factor of ~50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance towards scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.

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