Related papers: High-speed photonic crystal modulator with non-volatile memory via structurally-engineered strain concentration in a piezo-MEMS platform

High-speed photonic crystal modulator with non-volatile memory via structurally-engineered strain concentration in a piezo-MEMS platform

URL: http://arxiv.org/abs/2310.07798v2
Date: Fri, 13 Oct 2023 17:57:09 GMT
Title: High-speed photonic crystal modulator with non-volatile memory via structurally-engineered strain concentration in a piezo-MEMS platform
Authors: Y. Henry Wen, David Heim, Matthew Zimmermann, Roman A. Shugayev, Mark Dong, Andrew J. Leenheer, Gerald Gilbert, Matt Eichenfield, Mikkel Heuck, Dirk R. Englund
Abstract summary: In quantum and classical optics, the transmission change per voltage (dT/dV) is a critical figure of merit for electro-optic (EO) modulators. Here, we introduce a cavity-based EO modulator to solve both trade-offs in terms of speed and spectral tuning.
Score: 0.0
License: http://creativecommons.org/licenses/by-nc-sa/4.0/
Abstract: Numerous applications in quantum and classical optics require scalable, high-speed modulators that cover visible-NIR wavelengths with low footprint, drive voltage (V) and power dissipation. A critical figure of merit for electro-optic (EO) modulators is the transmission change per voltage, dT/dV. Conventional approaches in wave-guided modulators seek to maximize dT/dV by the selection of a high EO coefficient or a longer light-material interaction, but are ultimately limited by nonlinear material properties and material losses, respectively. Optical and RF resonances can improve dT/dV, but introduce added challenges in terms of speed and spectral tuning, especially for high-Q photonic cavity resonances. Here, we introduce a cavity-based EO modulator to solve both trade-offs in a piezo-strained photonic crystal cavity. Our approach concentrates the displacement of a piezo-electric actuator of length L and a given piezoelectric coefficient into the PhCC, resulting in dT/dV proportional to L under fixed material loss. Secondly, we employ a material deformation that is programmable under a "read-write" protocol with a continuous, repeatable tuning range of 5 GHz and a maximum non-volatile excursion of 8 GHz. In telecom-band demonstrations, we measure a fundamental mode linewidth = 5.4 GHz, with voltage response 177 MHz/V corresponding to 40 GHz for voltage spanning -120 to 120 V, 3dB-modulation bandwidth of 3.2 MHz broadband DC-AC, and 142 MHz for resonant operation near 2.8 GHz operation, optical extinction down to min(log(T)) = -25 dB via Michelson-type interference, and an energy consumption down to 0.17 nW/GHz. The strain-enhancement methods presented here are applicable to study and control other strain-sensitive systems.

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