High kinetic inductance NbTiN films for quantum limited travelling wave parametric amplifiers

• URL: http://arxiv.org/abs/2310.11410v2
• Date: Wed, 18 Oct 2023 15:30:27 GMT
• Title: High kinetic inductance NbTiN films for quantum limited travelling wave parametric amplifiers
• Authors: Federica Mantegazzini (1 and 2), Felix Ahrens (1 and 2), Matteo Borghesi (3 and 4 and 5), Paolo Falferi (1 and 6 and 2), Luca Fasolo (7), Marco Faverzani (3 and 4 and 5), Elena Ferri (4), Danilo Labranca (3 and 4 and 5), Benno Margesin (1 and 2), Renato Mezzena (8 and 2), Roberto Moretti (3 and 4 and 5), Angelo Nucciotti (3 and 4 and 5), Luca Origo (3 and 4 and 5), Andrea Vinante (1 and 6 and 2), Mario Zannoni (3 and 4 and 5), Andrea Giachero (3 and 4 and 5)
• Abstract summary: We present the optimisation of the sputter-deposition process of NbTiN films using a Nb80%T20 target. We have obtained a NbTiN film with a kinetic inductance of 8.5 pH/sq which we have exploited to fabricate KI-TWPA prototype devices.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: A wide-bandwidth and low-noise amplification chain in the microwave regime is crucial for the efficient read-out of quantum systems based on superconducting detectors, such as Microwave Kinetic Inductance Detectors (MKIDs), Transition Edge Sensors (TESs), Magnetic Microcalorimeters (MMCs), and RF cavities, as well as qubits. Kinetic Inductance Travelling Wave Parametric Amplifiers (KI-TWPAs) operated in a three-wave mixing fashion have demonstrated exceptional dynamic range and low-noise performance, approaching the quantum limit. These amplifiers can be fabricated using a single layer of a high kinetic inductance film as weakly dispersive artificial transmission lines, with the ability to control the phase-matched bandwidth through dispersion engineering. In this study, we present the optimisation of the rf sputter-deposition process of NbTiN films using a Nb80%T20 target, with the goal of achieving precise control over film characteristics, resulting in high kinetic inductance while maintaining a high transition temperature. The parameter landscape related to the different sputtering conditions, such as pressure, power, and nitrogen flow, has been explored and the film thickness has been used as a fine-tuning parameter to adjust the properties of the final NbTiN films used for the fabrication of KI-TWPAs. As a final result, we have obtained a NbTiN film with a kinetic inductance of 8.5 pH/sq which we have exploited to fabricate KI-TWPA prototype devices, showing promising amplification performance.

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