Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications

• URL: http://arxiv.org/abs/2310.19510v3
• Date: Sun, 08 Dec 2024 05:10:41 GMT
• Title: Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications
• Authors: Murat Can Sarihan, Jiahui Huang, Jin Ho Kang, Cody Fan, Wei Liu, Khalifa M. Azizur-Rahman, Baolai Liang, Chee Wei Wong,
• Abstract summary: A limited number of O-band color centers have been explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band defects in silicon: T centers and $*$Cu (transition metal) color centers.
• Score: 10.626059077145525
• License:
• Abstract: Color centers in the O-band (1260-1360 nm) are critical for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band defects in silicon: T centers and $^*$Cu (transition metal) color centers. During T center formation, we observed the formation and dissolution of various defects, including the copper-silver-related defect with a doublet line around 1312 nm ($^*$Cu$^{0}_{n}$), near the optical fiber zero dispersion wavelength. We then investigate the photophysics of both T and $^*$Cu centers, focusing on their emission spectra and spin properties to assess their potential for high-fidelity spin-photon interfaces. Additionally, we report a 25\% broadening of the $^*$Cu$^{0}_{0}$ line under a 0.5 T magnetic field, potentially linked to spin degeneracy, suggesting that this defect may provide a promising alternative to T centers for spin-photon interfaces.

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