T centres in photonic silicon-on-insulator material

• URL: http://arxiv.org/abs/2103.03998v1
• Date: Sat, 6 Mar 2021 00:34:51 GMT
• Title: T centres in photonic silicon-on-insulator material
• Authors: E. R. MacQuarrie and C. Chartrand and D. B. Higginbottom and K. J. Morse and V. A. Karasyuk and S. Roorda and S. Simmons
• Abstract summary: T radiation damage centres in silicon provide a promising photon-spin interface. These defect centres have only been studied as ensembles in bulk silicon. We demonstrate the reliable creation of high concentration T centre ensembles in the 220 nm device layer of silicon-on-insulator (SOI) wafers.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band optical transition near 1326 nm and long-lived electron and nuclear spin lifetimes. To date, these defect centres have only been studied as ensembles in bulk silicon. Here, we demonstrate the reliable creation of high concentration T centre ensembles in the 220 nm device layer of silicon-on-insulator (SOI) wafers by ion implantation and subsequent annealing. We then develop a method that uses spin-dependent optical transitions to benchmark the characteristic optical spectral diffusion within these T centre ensembles. Using this new technique, we show that with minimal optimization to the fabrication process high densities of implanted T centres localized $\lesssim$100 nm from an interface display ~1 GHz characteristic levels of total spectral diffusion.

Related papers

• Optical transition parameters of the silicon T centre [0.0]
  silicon T centre's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest. Key parameters of the T centre's spin-selective optical transitions remain undetermined or ambiguous in literature. We provide a model of the T centre's optical and spin properties under strain, electric, and magnetic fields.
  arXiv  Detail & Related papers  (2024-05-12T03:04:23Z)
• Cavity-coupled telecom atomic source in silicon [0.0]
  In this work, we demonstrate the cavity-enhanced fluorescence emission from a single T center. Results represent a significant step towards building efficient T center spin-photon interfaces for quantum information processing and networking applications.
  arXiv  Detail & Related papers  (2023-10-30T21:03:38Z)
• High-efficiency single photon emission from a silicon T-center in a nanobeam [0.7656045817750738]
  Color centers in Si could serve as both efficient quantum emitters and quantum memories with long coherence times. We demonstrate high-efficiency single photon emission from a single T center using a nanobeam.
  arXiv  Detail & Related papers  (2023-08-08T19:17:24Z)
• Microwave-based quantum control and coherence protection of tin-vacancy spin qubits in a strain-tuned diamond membrane heterostructure [54.501132156894435]
  Tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and spin properties at 1.7 K. We introduce a new platform that overcomes these challenges - SnV centers in uniformly strained thin diamond membranes. The presence of crystal strain suppresses temperature dependent dephasing processes, leading to a considerable improvement of the coherence time up to 223 $mu$s at 4 K.
  arXiv  Detail & Related papers  (2023-07-21T21:40:21Z)
• Room Temperature Fiber-Coupled single-photon devices based on Colloidal Quantum Dots and SiV centers in Back Excited Nanoantennas [91.6474995587871]
  Directionality is achieved with a hybrid metal-dielectric bullseye antenna. Back-excitation is permitted by placement of the emitter at or in a sub-wavelength hole positioned at the bullseye center.
  arXiv  Detail & Related papers  (2023-03-19T14:54:56Z)
• Photophysics of Intrinsic Single-Photon Emitters in Silicon Nitride at Low Temperatures [97.5153823429076]
  A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the technologically mature silicon nitride photonics platform.
  arXiv  Detail & Related papers  (2023-01-25T19:53:56Z)
• Purcell enhancement of single-photon emitters in silicon [68.8204255655161]
  Individual spins that are coupled to telecommunication photons offer unique promise for distributed quantum information processing. We implement such an interface by integrating erbium dopants into a nanophotonic silicon resonator. We observe optical Rabi oscillations and single-photon emission with a 78-fold Purcell enhancement.
  arXiv  Detail & Related papers  (2023-01-18T19:38:38Z)
• Vanadium in Silicon Carbide: Telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions [0.0]
  Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology. Key characteristics of this defect family including their spin relaxation lifetime (T1), charge state dynamics, and level structure are not fully understood.
  arXiv  Detail & Related papers  (2022-06-13T15:20:39Z)
• Spectral multiplexing of telecom emitters with stable transition frequency [68.8204255655161]
  coherent emitters can be entangled over large distances using photonic channels. We observe around 100 individual erbium emitters using a Fabry-Perot resonator with an embedded 19 micrometer thin crystalline membrane. Our results constitute an important step towards frequency-multiplexed quantum-network nodes operating directly at a telecommunication wavelength.
  arXiv  Detail & Related papers  (2021-10-18T15:39:07Z)
• Tunable quantum photonics platform based on fiber-cavity enhanced single photon emission from two-dimensional hBN [52.915502553459724]
  In this work we present a hybrid system consisting of defect centers in few-layer hBN grown by chemical vapor deposition and a fiber-based Fabry-Perot cavity. We achieve very large cavity-assisted signal enhancement up to 50-fold and equally strong linewidth narrowing owing to cavity funneling. Our work marks an important milestone for the deployment of 2D materials coupled to fiber-based cavities in practical quantum technologies.
  arXiv  Detail & Related papers  (2020-06-23T14:20:46Z)
• The NV centre coupled to an ultra-small mode volume cavity: a high efficiency source of indistinguishable photons at 200 K [0.15749416770494706]
  atom-like systems burdened by phonon sidebands and broadening due to surface charges. We design a silicon nitride cavity that allows 99 % efficient extraction of photons at 200 K. Our work points towards scalable fabrication of non-cryogenic atom-like efficient sources of indistinguishable photons.
  arXiv  Detail & Related papers  (2020-05-27T16:36:06Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.