Wavelength dependence of nitrogen-vacancy center charge cycling

• URL: http://arxiv.org/abs/2401.12668v1
• Date: Tue, 23 Jan 2024 11:23:27 GMT
• Title: Wavelength dependence of nitrogen-vacancy center charge cycling
• Authors: A. A. Wood, A. Lozovoi, R. M. Goldblatt, C. A. Meriles and A. M. Martin
• Abstract summary: We study the wavelength dependence of optical carrier generation in diamonds hosting nitrogen-vacancy centers. We observe distinct regimes where one- or two-photon ionization or recombination processes dominate, and a third regime where anti-Stokes mediated recombination drives weak NV charge cycling with red light. This work reports new optically-mediated charge cycling processes of the NV centers, and has consequences for schemes using charge transfer to identify non-luminescent defects.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Optically-active spin qubits in wide-bandgap semiconductors exist in several charge states, though typically only specific charge states exhibit desirable spin or photonic properties. An understanding of how interconversion between different charge states occurs is important for most applications seeking to employ such defects in quantum sensing and information processing, and additionally serves as a means of testing and verifying models of the defect electronic structure. Here, we use charge-sensitive confocal imaging to study the wavelength dependence of optical carrier generation in diamonds hosting nitrogen-vacancy (NV) centers, silicon vacancy (SiV) centers and substitutional nitrogen (N). We study the generation of distinctive charge-capture patterns formed when photogenerated charge carriers are captured by photoluminescent defects, using light spanning 405-633\,nm (1.96-3.06\,eV). We observe distinct regimes where one- or two-photon ionization or recombination processes dominate, and a third regime where anti-Stokes mediated recombination drives weak NV charge cycling with red light. We then compare red-induced charge cycling to fast charge carrier transport between isolated single NV centers driven with green and blue light. This work reports new optically-mediated charge cycling processes of the NV centers, and has consequences for schemes using charge transfer to identify non-luminescent defects and photoelectric detection, where ambiguity exists as to the source of photocurrent.

Related papers

• Lifetime-Limited and Tunable Emission from Charge-Stabilized Nickel Vacancy Centers in Diamond [0.0]
  We experimentally confirm the proposed geometric and electronic structure of the NiV defect in diamond. We characterize the optical properties and find a Debye-Waller factor of 0.62. This work provides a pathway towards coherent control of the NiV$-$ and its use as a spin qubit.
  arXiv  Detail & Related papers  (2024-11-11T18:16:15Z)
• Electrical pumping of h-BN single-photon sources in van der Waals heterostructures [5.237044436478257]
  Defect-induced tunneling currents across graphene and NbSe2 electrodes sandwiching an atomically thin h-BN layer allows persistent and repeatable generation of non-classical light from h-BN. The collected emission photon energies range between 1.4 and 2.9 eV, revealing the electrical excitation of a variety of atomic defects.
  arXiv  Detail & Related papers  (2024-07-19T06:54:41Z)
• Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
  Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature. We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
  arXiv  Detail & Related papers  (2024-05-03T23:02:30Z)
• Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation [11.870772746298043]
  We present a protocol for the scalable and targeted fabrication of single divacancies in 4H-SiC using a high-resolution focused helium ion beam. By measuring the ionization rate for different polytypes of divacancies, we found that the divacancies within stacking faults are more robust against resonant excitation. These findings highlight the immense potential of SiC divacancies for on-chip quantum photonics and the construction of efficient spin-to-photon interfaces.
  arXiv  Detail & Related papers  (2024-02-20T13:27:25Z)
• All-optical modulation with single-photons using electron avalanche [69.65384453064829]
  We demonstrate all-optical modulation using a beam with single-photon intensity. Our approach opens up the possibility of terahertz-speed optical switching at the single-photon level.
  arXiv  Detail & Related papers  (2023-12-18T20:14:15Z)
• Atomic diffraction from single-photon transitions in gravity and Standard-Model extensions [49.26431084736478]
  We study single-photon transitions, both magnetically-induced and direct ones, in gravity and Standard-Model extensions. We take into account relativistic effects like the coupling of internal to center-of-mass degrees of freedom, induced by the mass defect.
  arXiv  Detail & Related papers  (2023-09-05T08:51:42Z)
• Dopant-assisted stabilization of negatively charged single nitrogen-vacancy centers in phosphorus-doped diamond at low temperatures [0.0]
  Charge state instabilities have been a bottleneck for the implementation of solid-state spin systems. Here we investigate the stabilization of negatively charged nitrogen-vacancy centers in phosphorus-doped diamond at liquid helium temperatures.
  arXiv  Detail & Related papers  (2023-05-24T13:53:10Z)
• Single quantum emitters with spin ground states based on Cl bound excitons in ZnSe [55.41644538483948]
  We show a new type of single photon emitter with potential electron spin qubit based on Cl impurities inSe. Results suggest single Cl impurities are suitable as single photon source with potential photonic interface.
  arXiv  Detail & Related papers  (2022-03-11T04:29:21Z)
• Defect polaritons from first principles [0.0]
  We investigate three defect types -- CHB, CB-CB, and CB-VN -- in monolayer hexagonal boron nitride (hBN) For all defect systems, we show that the polaritonic splitting that shifts the absorption energy of the lower polariton is much higher than can be expected from a Jaynes-Cummings interaction. We find that initially localized electronic transition densities can become delocalized across the entire material under strong light-matter coupling.
  arXiv  Detail & Related papers  (2021-05-04T18:00:00Z)
• Investigating the coherent state detection probability of InGaAs/InP SPAD-based single-photon detectors [55.41644538483948]
  We investigate the probabilities of detecting single- and multi-photon coherent states on InGaAs/InP sine-gated and free-run avalanche diodes. We conclude that multi-photon state detection cannot be regarded as independent events of absorption of individual single-photon states.
  arXiv  Detail & Related papers  (2021-04-16T08:08:48Z)
• Optical repumping of resonantly excited quantum emitters in hexagonal boron nitride [52.77024349608834]
  We present an optical co-excitation scheme which uses a weak non-resonant laser to reduce transitions to a dark state and amplify the photoluminescence from quantum emitters in hexagonal boron nitride (hBN) Our results are important for the deployment of atom-like defects in hBN as reliable building blocks for quantum photonic applications.
  arXiv  Detail & Related papers  (2020-09-11T10:15:22Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.