Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

• URL: http://arxiv.org/abs/2402.12999v1
• Date: Tue, 20 Feb 2024 13:27:25 GMT
• Title: Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation
• Authors: Zhen-Xuan He, Ji-Yang Zhou, Wu-Xi Lin, Qiang Li, Rui-Jian Liang, Jun-Feng Wang, Xiao-Lei Wen, Zhi-He Hao, Wei Liu, Shuo Ren, Hao Li, Li-Xing You, Jian-Shun Tang, Jin-Shi Xu, Chuan-Feng Li, and Guang-Can Guo
• Abstract summary: We present a protocol for the scalable and targeted fabrication of single divacancies in 4H-SiC using a high-resolution focused helium ion beam. By measuring the ionization rate for different polytypes of divacancies, we found that the divacancies within stacking faults are more robust against resonant excitation. These findings highlight the immense potential of SiC divacancies for on-chip quantum photonics and the construction of efficient spin-to-photon interfaces.
• Score: 11.870772746298043
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during optical manipulation frequently causes fluctuations in the charge state and performance of these defects, thereby restricting the effectiveness of spin-photon interfaces. Recent predictions indicate that divacancy defects near stacking faults possess the capability to stabilize their neutral charge states, thereby providing robustness against photoionization effects. In this work, we present a comprehensive protocol for the scalable and targeted fabrication of single divacancy arrays in 4H-SiC using a high-resolution focused helium ion beam. Through photoluminescence emission (PLE) experiments, we demonstrate long-term emission stability with minimal linewidth shift ($\sim$ 50 MHz over 3 hours) for the single c-axis divacancies within stacking faults. By measuring the ionization rate for different polytypes of divacancies, we found that the divacancies within stacking faults are more robust against resonant excitation. Additionally, angle-resolved PLE spectra reveal their two resonant-transition lines with mutually orthogonal polarizations. Notably, the PLE linewidths are approximately 7 times narrower and the spin-coherent times are 6 times longer compared to divacancies generated via carbon-ion implantation. These findings highlight the immense potential of SiC divacancies for on-chip quantum photonics and the construction of efficient spin-to-photon interfaces, indicating a significant step forward in the development of quantum technologies.

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