Nanomechanical crystalline AlN resonators with high quality factors for
quantum optoelectromechanics
- URL: http://arxiv.org/abs/2402.12196v1
- Date: Mon, 19 Feb 2024 15:00:51 GMT
- Title: Nanomechanical crystalline AlN resonators with high quality factors for
quantum optoelectromechanics
- Authors: Anastasiia Ciers, Alexander Jung, Joachim Ciers, Laurentius Radit
Nindito, Hannes Pfeifer, Armin Dadgar, Andre Strittmatter, and Witlef
Wieczorek
- Abstract summary: Tensile strain in the material enables the use of dissipation dilution and strain engineering techniques, which increase the mechanical quality factor.
We demonstrate nanomechanical resonators that exploit dissipation dilution and strain engineering to reach a $Q_m times f_m$-product approaching $1013$ Hz at room temperature.
- Score: 38.12258102043167
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: High-$Q_m$ mechanical resonators are crucial for applications where low noise
and long coherence time are required, as mirror suspensions, quantum cavity
optomechanical devices, or nanomechanical sensors. Tensile strain in the
material enables the use of dissipation dilution and strain engineering
techniques, which increase the mechanical quality factor. These techniques have
been employed for high-$Q_m$ mechanical resonators made from amorphous
materials and, recently, from crystalline materials such as InGaP, SiC, and Si.
A strained crystalline film exhibiting substantial piezoelectricity expands the
capability of high-$Q_m$ nanomechanical resonators to directly utilize
electronic degrees of freedom. In this work we realize nanomechanical
resonators with $Q_m$ up to $2.9\times 10^{7}$ made from tensile-strained 290
nm-thick AlN, which is an epitaxially-grown crystalline material offering
strong piezoelectricity. We demonstrate nanomechanical resonators that exploit
dissipation dilution and strain engineering to reach a $Q_m \times f_m$-product
approaching $10^{13}$ Hz at room temperature. We realize a novel resonator
geometry, triangline, whose shape follows the Al-N bonds and offers a central
pad that we pattern with a photonic crystal. This allows us to reach an optical
reflectivity above 80% for efficient coupling to out-of-plane light. The
presented results pave the way for quantum optoelectromechanical devices at
room temperature based on tensile-strained AlN.
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