Multi-junction surface ion trap for quantum computing
- URL: http://arxiv.org/abs/2403.00208v1
- Date: Fri, 1 Mar 2024 00:51:38 GMT
- Title: Multi-junction surface ion trap for quantum computing
- Authors: J.D. Sterk, M.G. Blain, M. Delaney, R. Haltli, E. Heller, A.L.
Holterhoff, T. Jennings, N. Jimenez, A. Kozhanov, Z. Meinelt, E. Ou, J. Van
Der Wall, C. Noel, D. Stick
- Abstract summary: Surface ion traps with two-dimensional layouts of trapping regions are natural architectures for storing large numbers of ions.
Here we demonstrate a trap that addresses the scaling challenge of increasing power dissipation as the RF electrode increases in size.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: Surface ion traps with two-dimensional layouts of trapping regions are
natural architectures for storing large numbers of ions and supporting the
connectivity needed to implement quantum algorithms. Many of the components and
operations needed to fully exploit this architecture have already been
demonstrated, including operation at cryogenic temperatures with low heating,
low excitation transport, and ion control and detection with integrated
photonics. Here we demonstrate a trap that addresses the scaling challenge of
increasing power dissipation as the RF electrode increases in size. By raising
the RF electrode and removing most of the insulating dielectric layer below it
we reduce both ohmic and dielectric power dissipation. We also measure heating
rates across a range of motional frequencies and for different voltage sources
in a trap with a raised RF electrode but solid dielectric.
Related papers
- Cooperative engineering the multiple radio-frequency fields to reduce the X-junction barrier for ion trap chips [7.581541697986182]
ion shuttling operations at the junction are more frequently used, such as in the areas of separation, merging, and exchanging.
Several studies have been conducted to optimize the geometries of the radio-frequency (RF) electrodes to generate ideal trapping electric fields.
An effective method was proposed to reduce the junction's pseudo-potential barrier and ion height variation by setting several individual RF electrodes.
arXiv Detail & Related papers (2024-11-24T01:00:56Z) - Bilayer Ion Trap Design for 2D Arrays [0.0]
Junctions are fundamental elements that support qubit locomotion in two-dimensional ion trap arrays.
We propose and simulate a novel two-layer junction design incorporating two perpendicularly rotoreflected (rotated, then reflected) linear ion traps.
Our novel junction layout has the potential to enhance the flexibility of microfabricated ion trap control to enable large-scale trapped-ion quantum computing.
arXiv Detail & Related papers (2023-10-11T05:06:04Z) - Local Fluctuations in Cavity Control of Ferroelectricity [0.0]
We study a quantum paraelectric sandwiched between two high-quality metal mirrors.
We find that once a continuum of transverse modes are included the cavity ends up suppressing ferroelectric correlations.
Our results are based on a general formalism and are expected to be widely applicable.
arXiv Detail & Related papers (2023-01-05T02:55:52Z) - Enhancing the Coherence of Superconducting Quantum Bits with Electric
Fields [62.997667081978825]
We show that qubit coherence can be improved by tuning defects away from the qubit resonance using an applied DC-electric field.
We also discuss how local gate electrodes can be implemented in superconducting quantum processors to enable simultaneous in-situ coherence optimization of individual qubits.
arXiv Detail & Related papers (2022-08-02T16:18:30Z) - Driving Force and Nonequilibrium Vibronic Dynamics in Charge Separation
of Strongly Bound Electron-Hole Pairs [59.94347858883343]
We study the dynamics of charge separation in one, two and three-dimensional donor-acceptor networks.
This allows us to identify the precise conditions in which underdamped vibrational motion induces efficient long-range charge separation.
arXiv Detail & Related papers (2022-05-11T17:51:21Z) - Resonant tunneling diodes in semiconductor microcavities: modeling
polaritonic features in the THz displacement current [0.0]
The effect of the quantized electromagnetic field in the displacement current of a resonant tunneling diode is analyzed.
This mimics known effects predicted by a Jaynes-Cummings model in closed systems.
The computational burden involved in the multi-time measurements of THz currents is tackled by invoking a Bohmian description of the light-matter interaction.
arXiv Detail & Related papers (2022-04-27T10:51:03Z) - Near-Surface Electrical Characterisation of Silicon Electronic Devices
Using Focused keV Ions [45.82374977939355]
We show how to implant low-energy ions into silicon devices featuring an enlarged 60x60 $mu$m sensitive area.
Despite the weak internal electric field, near-unity charge collection efficiency is obtained from the entire sensitive area.
This can be explained by the critical role that the high-quality thermal gate oxide plays in the ion detection response.
arXiv Detail & Related papers (2022-01-27T06:29:46Z) - Engineering the Radiative Dynamics of Thermalized Excitons with Metal
Interfaces [58.720142291102135]
We analyze the emission properties of excitons in TMDCs near planar metal interfaces.
We find suppression or enhancement of emission relative to the point dipole case by several orders of magnitude.
nanoscale optical cavities are a viable pathway to generating long-lifetime exciton states in TMDCs.
arXiv Detail & Related papers (2021-10-11T19:40:24Z) - Measurement of the Low-temperature Loss Tangent of High-resistivity
Silicon with a High Q-factor Superconducting Resonator [58.720142291102135]
We present the direct loss tangent measurement of a high-resist intrinsicivity (100) silicon wafer in the temperature range from 70 mK to 1 K.
The measurement was performed using a technique that takes advantage of a high quality factor superconducting niobium resonator.
arXiv Detail & Related papers (2021-08-19T20:13:07Z) - A scalable helium gas cooling system for trapped-ion applications [51.715517570634994]
A modular cooling system is presented for use with multiple ion-trapping experiments simultaneously.
The cooling system is expected to deliver a net cooling power of 111 W at 70 K to up to four experiments.
arXiv Detail & Related papers (2021-06-14T16:37:54Z) - Heating of a trapped ion induced by dielectric materials [1.2495977992702094]
Electric-field noise due to surfaces disturbs the motion of nearby trapped ions.
We present a method that predicts the effect of dielectric materials on the ion's motion.
We expect that this approach can be used to optimize the design of ion-trap-based quantum computers and network nodes.
arXiv Detail & Related papers (2021-03-25T13:52:28Z)
This list is automatically generated from the titles and abstracts of the papers in this site.
This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.