High-fidelity single-spin shuttling in silicon

• URL: http://arxiv.org/abs/2406.07267v1
• Date: Tue, 11 Jun 2024 13:51:52 GMT
• Title: High-fidelity single-spin shuttling in silicon
• Authors: Maxim De Smet, Yuta Matsumoto, Anne-Marije J. Zwerver, Larysa Tryputen, Sander L. de Snoo, Sergey V. Amitonov, Amir Sammak, Nodar Samkharadze, Önder Gül, Rick N. M. Wasserman, Maximilian Rimbach-Russ, Giordano Scappucci, Lieven M. K. Vandersypen,
• Abstract summary: We report shuttling of an electron inside an isotopically purified Si/SiGe heterostructure using electric gate potentials. It allows us to displace an electron over an effective distance of 10 mum in under 200 ns with an average fidelity of 99%. Results will guide future efforts to realize large-scale semiconductor quantum processors.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms trapped with optical tweezers. For semiconductor spin qubits, several studies have investigated spin coherent shuttling of individual electrons, but high-fidelity transport over extended distances remains to be demonstrated. Here we report shuttling of an electron inside an isotopically purified Si/SiGe heterostructure using electric gate potentials. First, we form static quantum dots, and study how spin coherence decays as we repeatedly move a single electron between up to five dots. Next, we create a traveling wave potential to transport an electron in a moving quantum dot. This second method shows substantially better spin coherence than the first. It allows us to displace an electron over an effective distance of 10 {\mu}m in under 200 ns with an average fidelity of 99%. These results will guide future efforts to realize large-scale semiconductor quantum processors, making use of electron shuttling both within and between qubit arrays.

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