Effect of Etching Methods on Dielectric Losses in Transmons
- URL: http://arxiv.org/abs/2409.16097v1
- Date: Tue, 24 Sep 2024 13:52:12 GMT
- Title: Effect of Etching Methods on Dielectric Losses in Transmons
- Authors: T. A. Chudakova, G. S. Mazhorin, I. V. Trofimov, N. Yu. Rudenko, A. M. Mumlyakov, A. S. Kazmina, E. Yu. Egorova, P. A. Gladilovich, M. V. Chichkov, N. A. Maleeva, M. A. Tarkhov, V. I. Chichkov,
- Abstract summary: Transmons produced by two different methods of aluminum etching: wet etching in a solution of weak acids and dry etching using a chlorine-based plasma are experimentally studied.
The relaxation and coherence times for dry-etched qubits are more than twice as long as those for wet-etched ones.
- Score: 0.0
- License: http://creativecommons.org/licenses/by-nc-nd/4.0/
- Abstract: Superconducting qubits are considered as a promising platform for implementing a fault tolerant quantum computing. However, surface defects of superconductors and the substrate leading to qubit state decoherence and fluctuations in qubit parameters constitute a significant problem. The amount and type of defects depend both on the chip materials and fabrication procedure. In this work, transmons produced by two different methods of aluminum etching: wet etching in a solution of weak acids and dry etching using a chlorine-based plasma are experimentally studied. The relaxation and coherence times for dry-etched qubits are more than twice as long as those for wet-etched ones. Additionally, the analysis of time fluctuations of qubit frequencies and relaxation times, which is an effective method to identify the dominant dielectric loss mechanisms, indicates a significantly lower impact of two-level systems in the dry-etched qubits compared to the wet-etched ones.
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