BATIS: Bootstrapping, Autonomous Testing, and Initialization System for Quantum Dot Devices

• URL: http://arxiv.org/abs/2412.07676v2
• Date: Thu, 19 Dec 2024 19:18:15 GMT
• Title: BATIS: Bootstrapping, Autonomous Testing, and Initialization System for Quantum Dot Devices
• Authors: Tyler J. Kovach, Daniel Schug, M. A. Wolfe, E. R. MacQuarrie, Patrick J. Walsh, Jared Benson, Mark Friesen, M. A. Eriksson, Justyna P. Zwolak,
• Abstract summary: We introduce a bootstrapping, autonomous testing, and initialization system (BATIS) designed to streamline QD device evaluation and calibration. BATIS navigates high-dimensional gate voltage spaces, automating essential steps such as leakage testing and gate characterization. demonstrated at 1.3 K on a quad-QD Si/Si$_x$Ge$_1-x$ device.
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• Abstract: Semiconductor quantum dot (QD) devices have become central to advancements in spin-based quantum computing. As the complexity of QD devices grows, manual tuning becomes increasingly infeasible, necessitating robust and scalable autotuning solutions. Tuning large arrays of QD qubits depends on efficient choices of automated protocols. Here, we introduce a bootstrapping, autonomous testing, and initialization system (BATIS) designed to streamline QD device evaluation and calibration. BATIS navigates high-dimensional gate voltage spaces, automating essential steps such as leakage testing and gate characterization. For forming the current channels, BATIS follows a non-standard approach that requires a single measurement regardless of the number of channels. Demonstrated at 1.3 K on a quad-QD Si/Si$_x$Ge$_{1-x}$ device, BATIS eliminates the need for deep cryogenic environments during initial device diagnostics, significantly enhancing scalability and reducing setup times. By requiring only minimal prior knowledge of the device architecture, BATIS represents a platform-agnostic solution, adaptable to various QD systems, which bridges a critical gap in QD autotuning.

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