Fast Mølmer-Sørensen gates in trapped-ion quantum processors with compensated carrier transition

• URL: http://arxiv.org/abs/2501.02387v1
• Date: Sat, 04 Jan 2025 21:33:24 GMT
• Title: Fast Mølmer-Sørensen gates in trapped-ion quantum processors with compensated carrier transition
• Authors: Evgeny Anikin, Andrey Chuchalin, Nikita Morozov, Olga Lakhmanskaya, Kirill Lakhmanskiy,
• Abstract summary: We present an approach to design laser pulse shapes for Molmer-Sorensen gate in ion chains. We show that the fast-oscillating carrier term effectively modifies the spin-dependent forces acting on ions.
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• Abstract: Carrier transition is one of the major factors hindering the high-speed implementation of M{\o}lmer-S{\o}rensen gates in trapped-ion quantum processors. We present an approach to design laser pulse shapes for M{\o}lmer-S{\o}rensen gate in ion chains which accounts for the effect of carrier transition on qubit-phonon dynamics. We show that the fast-oscillating carrier term effectively modifies the spin-dependent forces acting on ions, and this can be compensated by a simple nonlinear transformation of a laser pulse. Using numerical simulations for short ion chains and perturbation theory for longer chains, we demonstrate that our approach allows to reach the infidelity below $10^{-4}$ while keeping the gate duration below 100 $\mu$s.

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