High-speed and high-connectivity two-qubit gates in long chains of trapped ions

• URL: http://arxiv.org/abs/2506.11385v1
• Date: Fri, 13 Jun 2025 01:09:06 GMT
• Title: High-speed and high-connectivity two-qubit gates in long chains of trapped ions
• Authors: Isabelle Savill-Brown, Joseph J. Hope, Alexander K. Ratcliffe, Varun D. Vaidya, Haonan Liu, Simon A. Haine, C. Ricardo Viteri, Zain Mehdi,
• Abstract summary: impulsive spin-dependent excitation can be used to perform high-fidelity non-local entangling operations in quasi-uniform chains of up to 40 ions.<n>We identify a regime of phonon-mediated entanglement between arbitrary pairs of ions in the chain, where any two pairs of ions in the chain can be entangled in approximately 1.3-2 centre-of-mass oscillation periods.<n>These results suggest entangling gates based on impulsive spin-dependent excitation presents new possibilities for large-scale computation in near-term ion-trap devices.
• Score: 35.40737096974622
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: We present a theoretical study of fast all-to-all entangling gates in trapped-ion quantum processors, based on impulsive excitation of spin-dependent motion with broadband laser pulses. Previous studies have shown that such fast gate schemes are highly scalable and naturally performant outside the Lamb-Dicke regime, however are limited to nearest-neighbour operations. Here we demonstrate that impulsive spin-dependent excitation can be used to perform high-fidelity non-local entangling operations in quasi-uniform chains of up to 40 ions. We identify a regime of phonon-mediated entanglement between arbitrary pairs of ions in the chain, where any two pairs of ions in the chain can be entangled in approximately 1.3-2 centre-of-mass oscillation periods. We assess the experimental feasibility of the proposed gate schemes, which reveals pulse error requirements that are weakly dependent on the length of the ion chain and the distance between the target qubits. These results suggest entangling gates based on impulsive spin-dependent excitation presents new possibilities for large-scale computation in near-term ion-trap devices.

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