Related papers: Local nanoscale probing of electron spins using NV centers in diamond

Local nanoscale probing of electron spins using NV centers in diamond

URL: http://arxiv.org/abs/2507.13295v2
Date: Mon, 28 Jul 2025 10:21:13 GMT
Title: Local nanoscale probing of electron spins using NV centers in diamond
Authors: Sergei Trofimov, Christos Thessalonikios, Victor Deinhart, Alexander Spyrantis, Lucas Tsunaki, Kseniia Volkova, Katja Höflich, Boris Naydenov,
Abstract summary: nitrogen-vacancy (NV) centers have been widely employed as nanoscale quantum sensors.<n>We fabricate nanoscale NV center ensembles in a diamond crystal containing low concentrations of nitrogen.<n>We measure the local nitrogen concentration on the level of 230 ppb (atomic parts per billion) using the double electron-electron resonance technique.
Score: 34.82692226532414
License: http://creativecommons.org/licenses/by/4.0/
Abstract: Substitutional nitrogen atoms in a diamond crystal (P1 centers) are, on one hand, a resource for creation of nitrogen-vacancy (NV) centers, that have been widely employed as nanoscale quantum sensors. On the other hand, P1's electron spin is a source of paramagnetic noise that degrades the NV's performance by shortening its coherence time. Accurate quantification of nitrogen concentration is therefore essential for optimizing diamond-based quantum devices. However, bulk characterization methods based on optical absorption or electron paramagnetic resonance often overlook local variations in nitrogen content. In this work, we use a helium ion microscope to fabricate nanoscale NV center ensembles at predefined sites in a diamond crystal containing low concentrations of nitrogen. We then utilize these NV-based probes to measure the local nitrogen concentration on the level of 230 ppb (atomic parts per billion) using the double electron-electron resonance (DEER) technique. Moreover, by comparing the DEER spectra with numerical simulations, we managed to determine the concentration of other unknown paramagnetic defects created during the ion implantation, reaching 15 ppb depending on the implantation dose.

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