Broadband Relaxation Dynamics of Boron-Vacancy Centers in Hexagonal Boron Nitride

• URL: http://arxiv.org/abs/2507.16786v1
• Date: Tue, 22 Jul 2025 17:31:26 GMT
• Title: Broadband Relaxation Dynamics of Boron-Vacancy Centers in Hexagonal Boron Nitride
• Authors: Abhishek Bharatbhai Solanki, Yueh-Chun Wu, Hamza Ather, Priyo Adhikary, Aravindh Shankar, Ian Gallagher, Xingyu Gao, Owen M. Matthiessen, Demid Sychev, Alexei Lagoutchev, Tongcang Li, Yong P. Chen, Vladimir M. Shalaev, Benjamin Lawrie, Pramey Upadhyaya,
• Abstract summary: negatively charged boron vacancy center ($mathrmV_B-$) in hexagonal boron nitride ($mathrmhBN$) has attracted attention for its potential applications in quantum sensing.<n>We investigate the spin relaxation dynamics of $mathrmV_B-$ centers over temperatures of $15-250$ K and magnetic fields of up to $7$ T.<n>Our results pave the way towards high-field, sub-terahertz quantum sensors based on two-dimensional spin-defect platforms.
• Score: 4.196460338924602
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: The negatively charged boron vacancy center ($\mathrm{V_B^-}$) in hexagonal boron nitride ($\mathrm{hBN}$) has attracted attention for its potential applications in quantum sensing. While GHz-scale sensing at low magnetic fields has been demonstrated with these defects, their behavior at high fields remains largely unexplored. We investigate the spin relaxation dynamics of $\mathrm{V_B^-}$ centers over temperatures of $15-250$ K and magnetic fields of up to $7$ T, corresponding to a ground-state splitting of $\sim 200$ GHz. Our results uncover distinct relaxation regimes, transitioning from spin-spin-interaction-driven and disorder-induced stretched exponential dynamics at low temperatures and fields to relaxation dominated by single-phonon processes at elevated magnetic fields. We extract temperature- and magnetic-field-dependent scaling behaviors of the relaxation rate to provide a quantitative picture of the interactions between $\mathrm{V_B^-}$ centers and their environment. Our results pave the way towards high-field, sub-terahertz quantum sensors based on two-dimensional spin-defect platforms.

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