Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride

• URL: http://arxiv.org/abs/2210.11485v3
• Date: Wed, 12 Jul 2023 18:52:34 GMT
• Title: Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride
• Authors: Ruotian Gong, Guanghui He, Xingyu Gao, Peng Ju, Zhongyuan Liu, Bingtian Ye, Erik A. Henriksen, Tongcang Li, Chong Zu
• Abstract summary: Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy centers in hexagonal boron nitride (hBN) with varying defect density. Our results provide new insights on the spin and charge properties of $mathrmV_mathrmB-$, which are important for future use of defects in hBN as quantum sensors and simulators.
• Score: 3.93972364832565
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy ($\mathrm{V}_{\mathrm{B}}^-$) centers in hexagonal boron nitride (hBN) with varying defect density. By employing advanced dynamical decoupling sequences to selectively isolate different dephasing sources, we observe more than 5-fold improvement in the measured coherence times across all hBN samples. Crucially, we identify that the many-body interaction within the $\mathrm{V}_{\mathrm{B}}^-$ ensemble plays a substantial role in the coherent dynamics, which is then used to directly estimate the concentration of $\mathrm{V}_{\mathrm{B}}^-$. We find that at high ion implantation dosage, only a small portion of the created boron vacancy defects are in the desired negatively charged state. Finally, we investigate the spin response of $\mathrm{V}_{\mathrm{B}}^-$ to the local charged defects induced electric field signals, and estimate its ground state transverse electric field susceptibility. Our results provide new insights on the spin and charge properties of $\mathrm{V}_{\mathrm{B}}^-$, which are important for future use of defects in hBN as quantum sensors and simulators.

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