Lattice tuning of charge and spin transport in $β_{12}$-borophene nanoribbons

• URL: http://arxiv.org/abs/2507.22571v2
• Date: Mon, 04 Aug 2025 13:01:00 GMT
• Title: Lattice tuning of charge and spin transport in $β_{12}$-borophene nanoribbons
• Authors: Masoumeh Davoudiniya, Jonas Fransson, Biplab Sanyal,
• Abstract summary: borophene nanoribbons (BNRs) exhibit magnetic zigzag edges, while other edge configurations are nonmagnetic.<n>In this work, we demonstrate that lattice vibrations-introduced for example, via a thermal bath coupled to the central BNR-can enhance spin polarization in ZBNRs.<n>In contrast, nonmagnetic edge configurations exhibit phonon-enhanced charge transport.
• Score: 0.0
• License: http://creativecommons.org/licenses/by-nc-nd/4.0/
• Abstract: $\beta_{12}$-borophene nanoribbons (BNRs) exhibit magnetic zigzag edges, while other edge configurations are nonmagnetic. However, when the source, central, and drain regions of a logic device are all composed of zigzag BNRs (ZBNRs), the resulting spin polarization remains weak, unless a high voltage is applied. In this work, we demonstrate that lattice vibrations-introduced for example, via a thermal bath coupled to the central BNR-can enhance spin polarization in ZBNRs. This enhancement manifests as marked changes in the current-voltage characteristics, enabling direct experimental probing. In contrast, nonmagnetic edge configurations exhibit phonon-enhanced charge transport. We employ a tight-binding approach augmented with local electron-phonon interactions described by the Holstein model, and compute the phonon-renormalized Green's functions and transport currents using the Landauer-B\"{u}ttiker formalism. The mechanism is supported by analyzing both spinless and spinful electronic dispersions and the corresponding density of states. Compared to the phonon-free edges, structural distortions lead to anisotropic electron-phonon couplings, which significantly modify both charge and spin transport. These results position phonon as an effective tuning parameter for optimizing borophene-based logic devices via engineered edge configurations.

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