Valley-dependent topological interface states in biased armchair nanoribbons in gapless graphene

• URL: http://arxiv.org/abs/2510.05653v1
• Date: Tue, 07 Oct 2025 08:04:39 GMT
• Title: Valley-dependent topological interface states in biased armchair nanoribbons in gapless graphene
• Authors: Zheng-Han Huang, Jing-Yuan Lai, Yu-Shu G. Wu,
• Abstract summary: We investigate an electrical bias-controlled, topological kind discontinuity in valley polarization, in a two-segment armchair nanoribbon of gapless graphene.<n>We explicitly obtain energy eigenvalues and probability distributions of discontinuity-induced, interface-confined electron eigenstates.<n>A configurational variation is introduced to transform the eigenstates into transport-active, quasi-localized ones.
• Score: 0.0
• License: http://creativecommons.org/licenses/by-sa/4.0/
• Abstract: We investigate an electrical bias-controlled, topological kind discontinuity in valley polarization, in a two-segment armchair nanoribbon of gapless graphene, where the discontinuity is created at the interface by applying opposite in-plane, transverse electrical biases to the two segments. In particular, using an efficient tight-binding theoretical formulation, we explicitly obtain energy eigenvalues and probability distributions of discontinuity-induced, interface-confined electron eigenstates, in a reference configuration. Moreover, implications of the confinement for electron transport are explored. A configurational variation is introduced to transform the eigenstates into transport-active, quasi-localized ones. Such states are shown to result in Fano "anti-resonances" in transmission spectra. The resilience of the quasi-localized states and their associated Fano fingerprints is also illustrated with respect to configurational fluctuations, demonstrating their potential detectability in realistic devices and suggesting transport spectroscopy as a practical probe of valley-dependent topological interface physics in graphene nanoribbons.

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