Real and momentum space analysis of topological phases in 2D d-wave altermagnets

• URL: http://arxiv.org/abs/2602.04854v1
• Date: Wed, 04 Feb 2026 18:40:39 GMT
• Title: Real and momentum space analysis of topological phases in 2D d-wave altermagnets
• Authors: Manuel Calixto,
• Abstract summary: This study provides a comprehensive analysis of topological phases in two-dimensional d-wave altermagnets.<n>We analize spin splitting, effective altermagnetic strength, and investigate the transport implications of these phases.<n>This work establishes a theoretical and information-theoretic framework for "edgetronics" in altermagnetic materials.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Altermagnetism has recently emerged as a third fundamental branch of magnetism, combining the vanishing net magnetization of antiferromagnets with the high-momentum-dependent spin splitting of ferromagnets. This study provides a comprehensive real- and momentum-space analysis of topological phases in two-dimensional d-wave altermagnets. By employing a tight-binding Hamiltonian, we characterize the topological phase transition occurring at a critical intra-sublattice hopping strength ($t_a^C$). We examine the emergence of Dirac nodal points and the resulting Berry curvature singularities, supported by a visual analysis of pseudospin texture winding. Crucially, we analize spin splitting, effective altermagnetic strength, and investigate the transport implications of these phases, uncovering giant conductivity anisotropy and spin-dependent "steering" effects driven by group velocity distribution across the Fermi surface. Beyond bulk properties, we analyze the edge state topology in ribbon geometries through the lens of information-theoretic markers like fidelity-susceptibility and inverse participation ratio, offering an alternative to traditional Chern number calculations. Our results demonstrate that the hybridization of edge states in ultra-narrow nanoribbons opens a controllable energy gap, a feature we exploit to propose a novel topological altermagnetic field-effect transistor design where ballistic and spatially spin-polarized transport can be electrostatically gated. This work establishes a theoretical and information-theoretic framework for "edgetronics" in altermagnetic materials, paving the way for next-generation, high-speed spintronic and "spin-splitter" logic devices and architectures.

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