Near-single-domain superconducting aluminum films on GaAs(111)A with exceptional crystalline quality for scalable quantum circuits
- URL: http://arxiv.org/abs/2602.17249v1
- Date: Thu, 19 Feb 2026 10:52:42 GMT
- Title: Near-single-domain superconducting aluminum films on GaAs(111)A with exceptional crystalline quality for scalable quantum circuits
- Authors: Hsien-Wen Wan, Yi-Ting Cheng, Chao-Kai Cheng, Jui-Min Chia, Chien-Ting Wu, Sheng-Shiuan Yeh, Chia-Hung Hsu, Jueinai Kwo, Minghwei Hong,
- Abstract summary: We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs (111)A wafers using molecular beam epitaxy.<n> Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and 9.6-nm-thick films, respectively.<n>The films exhibit critical temperatures approaching bulk values, establishing a materials platform for scalable, high-coherence superconducting qubits.
- Score: 1.1139778052366875
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and 9.6-nm-thick films, respectively-the lowest reported for Al on any substrate and long considered unattainable for practical device platforms. Azimuthal scans across off-normal Al{$11\bar{1}$} reflections exhibit narrow full width at half maximum (FWHM) values down to $0.55^\circ$, unmatched by epi-Al grown by any other method. Normal scans showed a well-defined (111) orientation with pronounced Pendellösung fringes, and $θ$-rocking-curve FWHM values down to $0.018^\circ$; the former indicates abrupt film-substrate and oxide-film interfaces. Electron backscatter diffraction mapping confirms macroscopic in-plane uniformity and the absence of $Σ$3 twin domains. Atomic force microscopy and scanning transmission electron microscopy confirmed atomically smooth surfaces and abrupt heterointerfaces. The films exhibit critical temperatures approaching bulk values, establishing a materials platform for scalable, high-coherence superconducting qubits.
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