Characterization of Inner Control Electrode Shapes for Multi-Layer Surface-Electrode Ion Traps
- URL: http://arxiv.org/abs/2603.00348v1
- Date: Fri, 27 Feb 2026 22:27:55 GMT
- Title: Characterization of Inner Control Electrode Shapes for Multi-Layer Surface-Electrode Ion Traps
- Abstract summary: Microfabricated surface-electrode traps are a scalable platform for trapped-ion quantum processors.<n>We analyze asymmetric inner control electrodes for simultaneous axial and radial control in multi-layer surface traps.<n>The improved control voltage efficiency of using solely inner electrodes enables the device's entire direct-current (DC) supply to be provided by integrated Cryo-CMOS circuits.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Microfabricated surface-electrode traps are a scalable platform for trapped-ion quantum processors. Recent advances in fabrication techniques have enabled the design of increasingly complex multi-layer structures. Yet the control electrodes remain mostly unchanged and of rectangular shape. We systematically analyze asymmetric inner control electrode shapes for simultaneous axial and radial control in multi-layer surface traps, characterize and compare a selection of different shapes, and verify their capabilities in realistic use-case scenarios for ion transport and micromotion compensation. Eliminating the need for the commonly used additional outer control electrodes, asymmetric inner control electrodes increase the compactness and space efficiency of surface-electrode traps while concurrently reducing the number of control signals. The improved control voltage efficiency of using solely inner electrodes enables the device's entire direct-current (DC) supply to be provided by integrated Cryo-CMOS circuits, further enhancing the scalability of the processor.
Related papers
- Numerical Optimization of Two-Qubit Gates in Silicon Flip-Flop Qubit Arrays under Electrical Control [0.0]
Silicon-based donor flip-flop qubits offer a promising path toward scalable, fault-tolerant quantum computing.<n>High-fidelity entangling operations in this platform remains challenging.<n>We employ a numerical simulation framework, FlipFlopQSim, that models the spin-orbital dynamics of interacting flip-flop qubits.
arXiv Detail & Related papers (2026-07-31T07:52:26Z) - AI-Driven Surrogate Models for Predicting Electrode-Scale Discharge Behavior in Lithium-Ion Batteries [47.27974914502511]
We introduce a deep learning surrogate pipeline based on the Swin3D Transformer to predict discharge dynamics directly from data.<n>The proposed method reduces the computational overhead by orders of magnitude, providing a scalable and efficient framework for high- throughput battery design and optimization.
arXiv Detail & Related papers (2026-07-22T09:10:48Z) - Localized control of large ion crystals in a Penning trap using a spatial light modulator [0.0]
Local control of Penning ion traps increases the power of the platform as a quantum simulator but is technically challenging due to the rapid rotation of the ion crystals.<n>Here we use an ultraviolet-compatible spatial light modulator to imprint programmable AC Stark shift patterns with different azimuthal symmetries and gradients that co-rotate with the ion crystals.<n> Comparisons of the measured ion qubit populations with calculations from independent measurements of the applied AC Stark shift patterns show good agreement, validating the technique and providing a path, with a higher format SLM, for parallelizable, coherent individual ion addressing
arXiv Detail & Related papers (2026-07-07T17:43:03Z) - Flux-Activated Resonant Control of a Bosonic Quantum Memory [63.35373457838474]
Bosonic circuit quantum electrodynamics (cQED) coherently control long-lived superconducting cavities.<n>We integrate an on-chip flux-control architecture with a long-lived bosonic memory housed in a 3D superconducting cavity.<n>We realize efficient arbitrary rotations between any pair of Fock levels in the memory.
arXiv Detail & Related papers (2026-02-20T10:22:53Z) - Feasibility Study of 3D-Printed Micro Junction Array for Ion Trap Quantum Processor [2.7735268395218564]
We introduce an ion trap platform based on a 3D-printed micro-junction array.<n>The integration of three-dimensionally structured micro Radio-Frequency (RF) electrodes above a surface-electrode trap enables flexible control of electric field profiles.<n>We identify a junction geometry that maintains uniform ion confinement during transport while substantially reducing the pseudopotential barrier.
arXiv Detail & Related papers (2025-09-21T23:17:32Z) - Electric Field Distortions in Surface Ion Traps with Integrated Nanophotonics [0.0]
In this work, we investigate the electric field distortion in a surface ion trap with integrated waveguides and grating couplers.<n>We analyze methods to reduce these distortions by exploiting symmetries and transparent conductive oxide materials.
arXiv Detail & Related papers (2025-03-26T10:09:31Z) - Cooperative engineering the multiple radio-frequency fields to reduce the X-junction barrier for ion trap chips [7.581541697986182]
ion shuttling operations at the junction are more frequently used, such as in the areas of separation, merging, and exchanging.
Several studies have been conducted to optimize the geometries of the radio-frequency (RF) electrodes to generate ideal trapping electric fields.
An effective method was proposed to reduce the junction's pseudo-potential barrier and ion height variation by setting several individual RF electrodes.
arXiv Detail & Related papers (2024-11-24T01:00:56Z) - Multi-junction surface ion trap for quantum computing [0.0]
Surface ion traps with two-dimensional layouts of trapping regions are natural architectures for storing large numbers of ions.
Here we demonstrate a trap that addresses the scaling challenge of increasing power dissipation as the RF electrode increases in size.
arXiv Detail & Related papers (2024-03-01T00:51:38Z) - Toward High-Performance Energy and Power Battery Cells with Machine
Learning-based Optimization of Electrode Manufacturing [61.27691515336054]
In this study, we tackle the issue of high-performance electrodes for desired battery application conditions.
We propose a powerful data-driven approach supported by a deterministic machine learning (ML)-assisted pipeline for bi-objective optimization of the electrochemical performance.
Our results suggested a high amount of active material, combined with intermediate values of solid content in the slurry and calendering degree, to achieve the optimal electrodes.
arXiv Detail & Related papers (2023-07-07T13:48:50Z) - Donor-Acceptor Pairs in Wide-Bandgap Semiconductors for Quantum
Technology Applications [38.9306189220547]
We investigate the electronic structure and interactions of donor-acceptor pairs (DAPs) formed by various point defects in diamond and silicon carbide (SiC)
We show that polarization differences between ground and excited states lead to unusually large electric dipole moments for several DAPs in diamond and SiC.
We predict radiative lifetimes and photoluminescence spectra for selected substitutional atoms and show that while B-N pairs in diamond are challenging to control due to their large electron-phonon coupling, DAPs in SiC, especially Al-N pairs, are suitable candidates to realize long-range optically controllable interactions
arXiv Detail & Related papers (2023-05-09T22:45:13Z) - High-fidelity trapped-ion qubit operations with scalable photonic
modulators [0.0]
optical modulators are used to control the phase, frequency, and amplitude of light directed to individual atoms.
These elements are expensive, bulky, consume substantial power, and often rely on free-space I/O channels.
We design, fabricate, and test an optical modulator capable of monolithic integration with a surface-electrode ion trap.
arXiv Detail & Related papers (2022-10-25T22:22:11Z) - Enhancing the Coherence of Superconducting Quantum Bits with Electric
Fields [62.997667081978825]
We show that qubit coherence can be improved by tuning defects away from the qubit resonance using an applied DC-electric field.
We also discuss how local gate electrodes can be implemented in superconducting quantum processors to enable simultaneous in-situ coherence optimization of individual qubits.
arXiv Detail & Related papers (2022-08-02T16:18:30Z) - Driving Force and Nonequilibrium Vibronic Dynamics in Charge Separation
of Strongly Bound Electron-Hole Pairs [59.94347858883343]
We study the dynamics of charge separation in one, two and three-dimensional donor-acceptor networks.
This allows us to identify the precise conditions in which underdamped vibrational motion induces efficient long-range charge separation.
arXiv Detail & Related papers (2022-05-11T17:51:21Z) - Near-Surface Electrical Characterisation of Silicon Electronic Devices
Using Focused keV Ions [45.82374977939355]
We show how to implant low-energy ions into silicon devices featuring an enlarged 60x60 $mu$m sensitive area.
Despite the weak internal electric field, near-unity charge collection efficiency is obtained from the entire sensitive area.
This can be explained by the critical role that the high-quality thermal gate oxide plays in the ion detection response.
arXiv Detail & Related papers (2022-01-27T06:29:46Z) - Control and measurement of electric dipole moments in levitated
optomechanics [51.52720563165496]
Control of multipole moments in the charge distribution of levitated sensors is a key requirement to sufficiently reduce background sources in future applications.
Control of multipole moments in the charge distribution of levitated sensors is a key requirement to sufficiently reduce background sources in future applications.
arXiv Detail & Related papers (2021-08-10T02:25:39Z)
This list is automatically generated from the titles and abstracts of the papers in this site.
This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.