Ab Initio Study of Erbium Point Defects in 4H-SiC for Quantum Devices

• URL: http://arxiv.org/abs/2603.15343v1
• Date: Mon, 16 Mar 2026 14:29:23 GMT
• Title: Ab Initio Study of Erbium Point Defects in 4H-SiC for Quantum Devices
• Abstract summary: Single erbium defect centers in 4H-SiC are examples of such defects.<n>This work presents a first-principles study of erbium point defects in 4H-SiC using density functional theory.
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• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Identifying scalable materials systems that exhibit quantum behavior is a central challenge in quantum information science. Point defects in certain wide-bandgap semiconductors are promising in this regard due to the maturity of semiconductor manufacturing and ion implantation technology. Single erbium defect centers in 4H-SiC are examples of such defects that provide access to discrete defect-induced electron energy levels within the bulk material bandgap, which can be utilized for a variety of quantum technologies, such as single-photon emission for secure communication and distributed quantum computing. This work presents a first-principles study of erbium point defects in 4H-SiC using density functional theory. These results provide materials-level support for the development of Er point defects in 4H-SiC as a scalable platform for quantum devices, helping to bridge the gap between quantum physics and the practical realization of quantum networks.

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