Tantalum-Encapsulated Niobium Superconducting Resonators: High Internal Quality Factor and Improved Temporal Stability via Surface Passivation

• URL: http://arxiv.org/abs/2604.09050v1
• Date: Fri, 10 Apr 2026 07:24:10 GMT
• Title: Tantalum-Encapsulated Niobium Superconducting Resonators: High Internal Quality Factor and Improved Temporal Stability via Surface Passivation
• Abstract summary: Microwave losses at millikelvin temperatures are influenced by two-level systems associated with the complex NbOx surface oxide.<n>To mitigate these losses, we investigate a surface-engineering approach in which Nb films are capped in situ with a thin tantalum layer.<n>We fabricate Nb/Ta bilayer and reference Nb resonators on high-resistivity silicon using identical DC sputtering and wet etching conditions.<n>Fresh Ta-encapsulated devices exhibit internal quality factors up to 2.4 x 106 in the near-single-photon regime, with power dependence consistent with reduced TLS loss at the metal-
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• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Superconducting coplanar waveguide resonators are essential components in quantum processors, where their internal quality factor (Qi) constrains qubit coherence and readout fidelity. In niobium devices, microwave losses at millikelvin temperatures are strongly influenced by two-level systems (TLS) associated with the complex NbOx surface oxide. To mitigate these losses, we investigate a surface-engineering approach in which Nb films are capped in situ with a thin tantalum layer to suppress Nb2O5 formation and replace the native NbOx interface with a Ta-based oxide. We fabricate Nb/Ta bilayer and reference Nb resonators on high-resistivity silicon using identical DC sputtering and wet etching conditions, and characterize their performance at millikelvin temperatures. Fresh Ta-encapsulated devices exhibit internal quality factors up to 2.4 x 10^6 in the near-single-photon regime, with power dependence consistent with reduced TLS-related loss at the metal-air interface. A control Nb device fabricated under the same process shows comparatively lower Q_TLS, consistent with the beneficial effect of the Ta capping layer. Furthermore, ageing tests performed on Nb/Ta resonators after six months reveal a moderate reduction in Q_TLS relative to their initial values, yet the performance remains superior to newly fabricated Nb-only devices. These results suggest that thin Ta encapsulation enhances interface quality and contributes to improved temporal stability while remaining compatible with Nb-based fabrication workflows.

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