Telecom-band quantum memory with chlorine defects in silicon carbide

• URL: http://arxiv.org/abs/2605.03717v1
• Date: Tue, 05 May 2026 13:05:59 GMT
• Title: Telecom-band quantum memory with chlorine defects in silicon carbide
• Abstract summary: We report on chlorine-based defects in 4H-SiC as a platform for telecom-band quantum memory.<n>Time-resolved photoluminescence measurements reveal a short excited-state lifetime in the sub-nanosecond range.<n>We demonstrate that these defects are spin-active even at room temperature, exhibiting optically detected magnetic resonances (ODMR) in the sub-GHz frequency range.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Realization of quantum memory with a photonic interface in the telecommunication bands in a wafer-scalable platform is a central requirement for long-distance quantum networks. Silicon carbide (SiC) provides a technologically mature host for integrated quantum photonics, yet only a limited number of defects combine spin functionality with telecom emission. Here we report on chlorine-based defects in 4H-SiC as a platform for telecom-band quantum memory. The emission of these defects spans the entire telecommunication range with zero-phonon lines in the O- and C-bands and a Debye-Waller factor of up to $39 \, \%$. Time-resolved photoluminescence measurements reveal a short excited-state lifetime in the sub-nanosecond range. We demonstrate that these defects are spin-active even at room temperature, exhibiting optically detected magnetic resonances (ODMR) in the sub-GHz frequency range. Using ODMR spectroscopy and Ramsey interferometry, we resolve the hyperfine structure arising from the interaction with $^{35}\mathrm{Cl}$ nuclear spins. The ODMR spectra exhibit complex behaviour in an external magnetic field due to mixing of electron-nuclear spin states, which is well reproduced by our simulations. The spin relaxation and coherence times are in the sub-microsecond range, limited by rapid quenching of the ODMR contrast and attributed to charge-state metastability. The combination of telecom-band emission, coherent spin control and compatibility with wafer-scale fabrication positions Cl-related defects in SiC as a promising platform for chip-scale quantum memories with spin-photon interfaces operating in the fiber-optic telecommunication windows.

Related papers

• Optical spin tomography in a telecom C-band quantum dot [0.042159389323887214]
  Quantum dots emitting at telecom wavelengths present a promising spin-photon platform.<n>We benchmark the electron and hole g-factors and coherence properties of a droplet epitaxy QD.<n>We then perform full state tomography of the confined hole ground state to reveal subtle anisotropies in the spin precession.
  arXiv  Detail & Related papers  (2025-12-24T01:11:34Z)
• Deterministic and Scalable Coupling of Single 4H-SiC Spin Defects into Bullseye Cavities [14.24704706847718]
  deterministic and scalable coupling of both ensemble (PL4) and single PL6 spin defects into monolithic bullseye cavities on the 4H-SiCOI platform.<n>These advancements establish a viable pathway for developing scalable, high-performance SiC-based quantum photonic circuits.
  arXiv  Detail & Related papers  (2025-07-31T05:38:01Z)
• Optical spin readout of a silicon color center in the telecom L-band [0.7545833157486899]
  Efficient spin-photon interfaces are crucial for quantum networks, enabling entanglement distribution and information transfer over long distances.<n>Here, we demonstrate the optical detection of spin states in the C center, a carbon-oxygen defect in silicon that exhibits a zero-phonon line at 1571 nm.<n>By combining optical excitation with microwave driving, we achieve optically detected magnetic resonance, enabling spin-state readout via telecom-band optical transitions.
  arXiv  Detail & Related papers  (2025-02-11T15:22:38Z)
• Quantum bit with telecom wave-length emission from a simple defect in Si [4.1020458874018795]
  Controlled creation and erasure of simple carbon interstitial defects have been successfully realised in silicon. This defect has a stable structure near room temperature and emits in the wave-length where the signal loss is minimal. We propose that a carbon interstitial can act as a quantum bit and may realize a spin-to-photon interface in CMOS-compatible platforms.
  arXiv  Detail & Related papers  (2024-04-25T20:46:54Z)
• Microwave-based quantum control and coherence protection of tin-vacancy spin qubits in a strain-tuned diamond membrane heterostructure [54.501132156894435]
  Tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and spin properties at 1.7 K. We introduce a new platform that overcomes these challenges - SnV centers in uniformly strained thin diamond membranes. The presence of crystal strain suppresses temperature dependent dephasing processes, leading to a considerable improvement of the coherence time up to 223 $mu$s at 4 K.
  arXiv  Detail & Related papers  (2023-07-21T21:40:21Z)
• High-efficiency microwave-optical quantum transduction based on a cavity electro-optic superconducting system with long coherence time [52.77024349608834]
  Frequency conversion between microwave and optical photons is a key enabling technology to create links between superconducting quantum processors. We propose a microwave-optical platform based on long-coherence-time superconducting radio-frequency (SRF) cavities. We show that the fidelity of heralded entanglement generation between two remote quantum systems is enhanced by the low microwave losses.
  arXiv  Detail & Related papers  (2022-06-30T17:57:37Z)
• Spectral multiplexing of telecom emitters with stable transition frequency [68.8204255655161]
  coherent emitters can be entangled over large distances using photonic channels. We observe around 100 individual erbium emitters using a Fabry-Perot resonator with an embedded 19 micrometer thin crystalline membrane. Our results constitute an important step towards frequency-multiplexed quantum-network nodes operating directly at a telecommunication wavelength.
  arXiv  Detail & Related papers  (2021-10-18T15:39:07Z)
• Demonstration of electron-nuclear decoupling at a spin clock transition [54.088309058031705]
  Clock transitions protect molecular spin qubits from magnetic noise. linear coupling to nuclear degrees of freedom causes a modulation and decay of electronic coherence. An absence of quantum information leakage to the nuclear bath provides opportunities to characterize other decoherence sources.
  arXiv  Detail & Related papers  (2021-06-09T16:23:47Z)
• Cavity Quantum Electrodynamics Design with Single Photon Emitters in Hexagonal Boron Nitride [6.352389759470726]
  We numerically investigate the cavity quantum electrodynamics (cavity-QED) scheme incorporating defect-enabled single photon emitters in h-BN microdisk resonators. The whispering-gallery nature of microdisks can support multiple families of cavity resonances with different radial and azimuthal mode indices simultaneously. This study contributes toward realizing h-BN photonic components, such as low-threshold microcavity lasers and high-purity single photon sources.
  arXiv  Detail & Related papers  (2021-06-05T21:53:44Z)
• Multidimensional cluster states using a single spin-photon interface coupled strongly to an intrinsic nuclear register [48.7576911714538]
  Photonic cluster states are a powerful resource for measurement-based quantum computing and loss-tolerant quantum communication. We propose the generation of multi-dimensional lattice cluster states using a single, efficient spin-photon interface coupled strongly to a nuclear register.
  arXiv  Detail & Related papers  (2021-04-26T14:41:01Z)
• Room temperature single-photon emitters in silicon nitride [97.75917079876487]
  We report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. As SiN has recently emerged as one of the most promising materials for integrated quantum photonics, the proposed platform is suitable for scalable fabrication of quantum on-chip devices.
  arXiv  Detail & Related papers  (2021-04-16T14:20:11Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.