Related papers: Tuning quantum tunneling in WSe$

Tuning quantum tunneling in WSe$_2$ via strain engineering

URL: http://arxiv.org/abs/2605.24851v1
Date: Sun, 24 May 2026 03:53:42 GMT
Title: Tuning quantum tunneling in WSe$_2$ via strain engineering
Abstract summary: We study strain-engineered quantum transport in monolayer tungsten diselenide (WSe$$) in the presence of an electrostatic scalar potential.<n>Our numerical analysis reveals that strain acts as a powerful tuning parameter that reshapes the electronic dispersion.<n>The ability to tailor polarization and interference effects suggests promising opportunities for the design of next-generation spintronic, valleytronic, and optoelectronic devices.
Score: 0.0
License: http://creativecommons.org/licenses/by/4.0/
Abstract: We present a comprehensive theoretical study of strain-engineered quantum transport in monolayer tungsten diselenide (WSe$_2$) in the presence of an electrostatic scalar potential. By incorporating strain effects within a low-energy Dirac framework, we analyze their impact on spin- and valley-resolved transmission, conductance, and polarization. The applied potential barrier partitions the system into three distinct regions, allowing for an analytical derivation of the wave functions in each domain. Enforcing continuity conditions at the interfaces yields exact expressions for the transmission and reflection amplitudes. The transmission probability is evaluated from the corresponding current densities, while the conductance is obtained using the Landauer-Büttiker formalism, enabling a quantitative determination of spin and valley polarizations. Our numerical analysis reveals that strain acts as a powerful tuning parameter that reshapes the electronic dispersion and strongly modifies transport characteristics. In particular, the transmission and conductance exhibit pronounced oscillatory behavior driven by quantum interference and resonant tunneling mechanisms. More importantly, both spin and valley polarizations display substantial and highly controllable variations as functions of strain, barrier height, and incident energy. These results demonstrate that strain and electrostatic engineering provide an efficient and versatile platform for manipulating spin-valley degrees of freedom in WSe$_2$. The ability to tailor polarization and interference effects suggests promising opportunities for the design of next-generation spintronic, valleytronic, and optoelectronic devices based on two-dimensional transition-metal dichalcogenides.

Related papers

Strain- and potential-controlled tunneling in monolayer MoS$_2$ [0.0]
We study spin- and valley-resolved quantum transport in monolayer MoS$$ under the combined influence of mechanical strain and an external scalar potential.<n>We show that the interplay between strain and electrostatic potential enables efficient control of both valley and spin polarization of the transmitted current.
arXiv Detail & Related papers (2026-07-06T07:57:39Z)
Laser-assisted tunneling in a static tungsten diselenide WSe$_2$ barrier [0.0]
We study the tunneling effect of Dirac fermions in a monolayer WSe$$ subjected to a static electrostatic barrier and irradiated by a linearly polarized laser field.<n>Results show that the laser field induces a rich Floquet sideband structure, whose number and strength increase with the driving parameter $$.<n>This technology allows for the development of new optoelectronic devices, including quantum filters and light-controlled nanoscale transistors.
arXiv Detail & Related papers (2026-05-12T08:16:44Z)
Quantum Hall Effect at 0.002T [46.680073344221626]
We demonstrate a significant reduction in external inhomogeneity using a double-layer graphene architecture separated by an ultra-thin hexagonal boron nitride layer.<n>Shubnikov de-Haas oscillations emerge at magnetic fields below 1 mT, while integer quantum Hall features are observed at 0.002T.<n>These results demonstrate the platform's suitability for investigating strongly correlated electronic phases in graphene-based heterostructures.
arXiv Detail & Related papers (2026-01-22T14:40:33Z)
Valley-dependent topological interface states in biased armchair nanoribbons in gapless graphene [0.0]
We investigate an electrical bias-controlled, topological kind discontinuity in valley polarization, in a two-segment armchair nanoribbon of gapless graphene.<n>We explicitly obtain energy eigenvalues and probability distributions of discontinuity-induced, interface-confined electron eigenstates.<n>A configurational variation is introduced to transform the eigenstates into transport-active, quasi-localized ones.
arXiv Detail & Related papers (2025-10-07T08:04:39Z)
Design and Optimization of Spin Dynamics in Ge Quantum Dots: g-Factor Modulation, Dephasing Sweet Spots, and Phonon-Induced Relaxation [0.0]
We present a three-dimensional study of gate-defined quantum dot hole spin qubits in strained Si$_0.2$Ge$_0.8$/Ge heterostructures.<n>We quantify the impact of device size and gate bias on wavefunction localization, electric-field-induced g-factor modulation, and identify "sweet spots" in vertical electric field where g-factor sensitivity to charge noise is minimized.
arXiv Detail & Related papers (2025-09-12T22:39:03Z)
Electron-Electron Interactions in Device Simulation via Non-equilibrium Green's Functions and the GW Approximation [71.63026504030766]
electron-electron (e-e) interactions must be explicitly incorporated in quantum transport simulation.<n>This study is the first one reporting large-scale atomistic quantum transport simulations of nano-devices under non-equilibrium conditions.
arXiv Detail & Related papers (2024-12-17T15:05:33Z)
Tailoring coherent charge transport in graphene by deterministic defect generation [36.136619420474766]
We introduce lattice defects in graphene that enable phase-matched charge carrier waves.<n>Multiple electronic Fabry-Perot cavities are formed by creating periodically alternating defective and pristine nano-stripes.<n>Defective stripes behave as partially reflecting mirrors and resonantly confine the charge carrier waves within the pristine areas, giving rise to Fabry-Perot resonant modes.<n>These coherent phenomena survive up to 30 K for both polarities of charge carriers, contrarily to traditional monopolar electrostatically created Fabry-Perot interferometers.
arXiv Detail & Related papers (2024-09-07T15:37:23Z)
Nonlinear dynamical Casimir effect and Unruh entanglement in waveguide QED with parametrically modulated coupling [83.88591755871734]
We study theoretically an array of two-level qubits moving relative to a one-dimensional waveguide. When the frequency of this motion approaches twice the qubit resonance frequency, it induces parametric generation of photons and excitation of the qubits. We develop a comprehensive general theoretical framework that incorporates both perturbative diagrammatic techniques and a rigorous master-equation approach.
arXiv Detail & Related papers (2024-08-30T15:54:33Z)
Thermal masses and trapped-ion quantum spin models: a self-consistent approach to Yukawa-type interactions in the $λ\!φ^4$ model [44.99833362998488]
A quantum simulation of magnetism in trapped-ion systems makes use of the crystal vibrations to mediate pairwise interactions between spins. These interactions can be accounted for by a long-wavelength relativistic theory, where the phonons are described by a coarse-grained Klein-Gordon field. We show that thermal effects, which can be controlled by laser cooling, can unveil this flow through the appearance of thermal masses in interacting QFTs.
arXiv Detail & Related papers (2023-05-10T12:59:07Z)
Topological Josephson Junctions in the Integer Quantum Hall Regime [42.408991654684876]
tunable Josephson junctions (TJJs) are desirable platforms for investigating the anomalous Josephson effect and topological quantum insulator applications. We propose a robust and electrostatically tunable TJJ by combining the physics of the integer quantum Hall (IQH) regime and of superconductors. They are of particular relevance towards scalable and robust Andreev-qubit platforms, and also for efficient phase batteries.
arXiv Detail & Related papers (2022-11-04T16:45:07Z)
Driving Force and Nonequilibrium Vibronic Dynamics in Charge Separation of Strongly Bound Electron-Hole Pairs [59.94347858883343]
We study the dynamics of charge separation in one, two and three-dimensional donor-acceptor networks. This allows us to identify the precise conditions in which underdamped vibrational motion induces efficient long-range charge separation.
arXiv Detail & Related papers (2022-05-11T17:51:21Z)
Tunneling Effect in Gapped Phosphorene through Double Barriers [0.0]
Transport properties of charge carriers in phosphorene with a mass term through double barriers are studied. Results show the highly anisotropic character of phosphorene and the no signature of Klein tunneling at normal incidence contrary to graphene.
arXiv Detail & Related papers (2021-10-18T14:11:21Z)
Entanglement generation via power-of-SWAP operations between dynamic electron-spin qubits [62.997667081978825]
Surface acoustic waves (SAWs) can create moving quantum dots in piezoelectric materials. We show how electron-spin qubits located on dynamic quantum dots can be entangled.
arXiv Detail & Related papers (2020-01-15T19:00:01Z)

This list is automatically generated from the titles and abstracts of the papers in this site.