Characterizing the nitrogen-vacancy center singlet transition and its phonon sideband for absorption-based room-temperature magnetometry

• URL: http://arxiv.org/abs/2608.02060v1
• Date: Mon, 03 Aug 2026 10:57:47 GMT
• Title: Characterizing the nitrogen-vacancy center singlet transition and its phonon sideband for absorption-based room-temperature magnetometry
• Abstract summary: absorption techniques rely on magnetic-field-dependent absorption at the NV$-$ singlet zero phonon line at 1042$,$nm and its phonon sideband.<n>We study pump-laser- and microwave-induced cavity signal changes at room temperature over a spectral range of 680-1050$,$nm.<n>The highest contrast is found at 1042$,$nm, but multiple points of high contrast are found at the peaks of the phonon sideband.
• Score: 29.039962620404822
• License: http://creativecommons.org/licenses/by-nc-nd/4.0/
• Abstract: Magnetometry with nitrogen-vacancy (NV) centers in diamond has shown great promise in recent years. In particular, absorption-based magnetometry techniques, employing a cavity to enhance the absorption length, can improve the contrast and sensitivity compared to conventional techniques based on reading out the NV$^-$ triplet fluorescence. The absorption techniques rely on magnetic-field-dependent absorption at the NV$^-$ singlet zero phonon line at 1042$\,$nm and its phonon sideband. In a cavity-enhanced spectroscopy approach, we study pump-laser- and microwave-induced cavity signal changes at room temperature over a spectral range of 680-1050$\,$nm. Through normalization, we eliminate the cavity-enhancement effect and provide quasi-single-pass values for the absorption and optically detected magnetic resonance (ODMR) contrast. The highest contrast is found at 1042$\,$nm, but multiple points of high contrast are found at the peaks of the phonon sideband. Additionally, cavity-enhanced ODMR contrasts in the range of 50-80$\,\%$ are presented. We further measure the broadband singlet absorption cross section at room temperature with a novel method through microwave-induced signal changes. This method is insensitive to pump-laser-induced signal changes by other defects and quantifies the room-temperature absorption strength of the singlet transition and its entire phonon sideband. We determine the absorption cross section at 1042$\,$nm to be $σ^{\,\bigstar}_{1042}=(0.89\pm0.14)\cdot 10^{-21}\,\text{m}^2$ or $σ^{\,\blacktriangle}_{1042}=(2.9\pm0.5)\cdot 10^{-21}\,\text{m}^2$. depending on the employed 532$\,$nm NV$^-$ absorption cross section.

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